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Studying the operation of MOSFET RC-phase shift oscillator under different environmental conditions
Ibrahim Reiham O.,Abd El-Azeem S.M.,El-Ghanam S.M.,Soliman F.A.S. 한국원자력학회 2020 Nuclear Engineering and Technology Vol.52 No.8
The present work was mainly concerned with studying the operation of RC-phase shift oscillator based on MOSFET type 2N6660 under the influence of different temperature levels ranging from room temperature (25 C) up-to135 C and gamma-irradiation up-to 3.5 kGy. In this concern, both the static (IeV) characteristic curves of MOSFET devices and the output signal of the proposed oscillator were recorded under ascending levels of both temperature and gamma-irradiation. From which, it is clearly shown that the drain current was decreased from 0.22 A, measured at 25 C, down to 0.163 A, at 135 C. On the other hand, its value was increased up-to 0.49 A, whenever the device was exposed to gamma-rays dose of 3.5 kGy. Considering RC-phase shift oscillator, the oscillation frequency and output pk-pk voltage were decreased whenever MOSFET device exposed to gamma radiation by ratio 54.9 and 91%, respectively. While, whenever MOSFET device exposed to temperature the previously mentioned parameters were shown to be decreased by ratio 2.07 and 46.2%.