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Tae-Woo Kim,Dong-Hyi Koh,Chan-Soo Shin,Won-Kyu Park,Orzali, Tommaso,Hobbs, Chris,Maszara, Witek P.,Dae-Hyun Kim IEEE 2015 IEEE electron device letters Vol.36 No.3
<P>We report on L-g = 80-nm trigate quantum-well InGaAs metal-oxide-semiconductor field-effect transistors (MOSFETs) with record combination of subthreshold swing, transconductance and ON-current performance. The device features a multilayer cap design, bilayer Al2O3/HfO2 (0.7/2 nm) gate-stack by atomic layer deposition and dry etched In0.53Ga0.47As fin. An L-g = 80-nm trigate MOSFET with fin-width (W-fin) = 30 nm and fin-height (H-fin) = 20 nm exhibits excellent performance, such as ON-resistance (R-ON) = 220 Omega-mu m, subthreshold swing (S) = 82 mV/dec, and drain-induced-barrier lowering = 10 mV/V at V-DS = 0.5 V. Besides, the device exhibits record values of maximum transconductance (g(m_ max)) = 1800 mu S/mu m and I-ON = 0.41 mA/mu m at V-DS = 0.5 V, and a record combination of g(m_ max) and S in any III-V nonplanar MOSFET technology.</P>