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RISS 인기검색어
- 검색키워드
- 저자 : DaeHwa Joung (검색결과 3 건)
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DaeHwa Joung,Hyeji Park,Jihun Mun,Jonghoo Park,Sang-Woo Kang,TaeWan Kim 한국진공학회(ASCT) 2017 Applied Science and Convergence Technology Vol.26 No.5
The two-dimensional layered MoS2 has high mobility and excellent optical properties, and there has been much research on the methods for using this for next generation electronics. MoS2 is similar to graphene in that there is comparatively weak bonding through Van der Waals covalent bonding in the substrate-MoS2 and MoS2-MoS2 heteromaterial as well in the layer-by-layer structure. So, on the monatomic level, MoS2 can easily be exfoliated physically or chemically. During the MoS2 field-effect transistor fabrication process of photolithography, when using water, the water infiltrates into the substrate-MoS2 gap, and leads to the problem of a rapid decline in the material’s yield. To solve this problem, an epoxy-based, as opposed to a water-based photoresist, was used in the photolithography process. In this research, a hydrophobic MoS2 field effect transistor (FET) was fabricated on a hydrophilic SiO2 substrate via chemical vapor deposition CVD. To solve the problem of MoS2 exfoliation that occurs in water-based photolithography, a PPMA sacrificial layer and SU-8 2002 were used, and a MoS2 film FET was successfully created. To minimize Ohmic contact resistance, rapid thermal annealing was used, and then electronic properties were measured.
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Joung, DaeHwa,Park, Hyeji,Mun, Jihun,Park, Jonghoo,Kang, Sang-Woo,Kim, TaeWan The Korean Vacuum Society 2017 Applied Science and Convergence Technology Vol.26 No.5
The two-dimensional layered $MoS_2$ has high mobility and excellent optical properties, and there has been much research on the methods for using this for next generation electronics. $MoS_2$ is similar to graphene in that there is comparatively weak bonding through Van der Waals covalent bonding in the substrate-$MoS_2$ and $MoS_2-MoS_2$ heteromaterial as well in the layer-by-layer structure. So, on the monatomic level, $MoS_2$ can easily be exfoliated physically or chemically. During the $MoS_2$ field-effect transistor fabrication process of photolithography, when using water, the water infiltrates into the substrate-$MoS_2$ gap, and leads to the problem of a rapid decline in the material's yield. To solve this problem, an epoxy-based, as opposed to a water-based photoresist, was used in the photolithography process. In this research, a hydrophobic $MoS_2$ field effect transistor (FET) was fabricated on a hydrophilic $SiO_2$ substrate via chemical vapor deposition CVD. To solve the problem of $MoS_2$ exfoliation that occurs in water-based photolithography, a PPMA sacrificial layer and SU-8 2002 were used, and a $MoS_2$ film FET was successfully created. To minimize Ohmic contact resistance, rapid thermal annealing was used, and then electronic properties were measured.
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Kim, TaeWan,Joung, DaeHwa,Park, Jonghoo ELSEVIER 2018 CURRENT APPLIED PHYSICS Vol.18 No.7
<P>We grow atomically thin molybdenum ditelluride (MoTe2) films on a SiO2/Si substrate by means of metal-organic chemical vapor deposition (MOCVD). Our Raman spectroscopy measurements reveal the formation of 2H-phase MoTe2 films. Further, transmission electron microscopy and X-ray photoelectron spectroscopy studies indicate a three-atomic-layer structure and the surface element composition of MoTe2 films. In this study, we mainly focus on the influence of metal contacts attached to the films on their electrical performance. We fabricate 2H-phase-MoTe2-based field-effect transistors (FETs) with various metal contacts such as titanium/gold, nickel and palladium, which present p-type semiconductor properties. We also examine the influence of the work functions of the contact metals on the electrical properties of three-atomic-layer-MoTe2-based FET devices. For a p-type MoTe2 semiconductor, higher work functions of the contact metals afford narrower Schottky barrier heights (SBHs) and eventually highly efficient carrier injection through the contacts.</P>
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