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- 저자 : DIDIK ARYANTO (검색결과 2 건)
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AFM, HR-XRD AND PL CHARACTERIZATION OF STACKED STRUCTURES In0.5Ga0.5As/GaAs QUANTUM DOTS
DIDIK ARYANTO,ZULKAFLI OTHAMAN,AMIRA S. AMERUDDIN,ABD. KHAMIM ISMAIL 성균관대학교(자연과학캠퍼스) 성균나노과학기술원 2010 NANO Vol.5 No.2
In0.5Ga0.5As quantum dots (QDs) stacked structure were studied using atomic force microscopy (AFM), high-resolution X-ray diffraction (HR-XRD) and photoluminescence (PL) characterization. Evolution in the dots size and dots density in the stacked structures is strongly influenced by the dot formation in the under-layer and the structure of the spacer layers. AFM results revealed that the dots formation on the top can be changed by increasing the number of stacked QDs. However, the dots formation is not vertically aligned since HR-XRD measurement gave different satellite peak on n-stacked QD structures. Room-temperature PL measurements show variation in the PL spectra, where blue-shifted PL peak positions are observed when the number of stack is increased. Variation in the HR-XRD and PL measurement is also attributed to the size, composition and density of the dots in the stacked structures.
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DIDIK ARYANTO,ZULKAFLI OTHAMAN,ABD. KHAMIM ISMAIL 성균관대학교(자연과학캠퍼스) 성균나노과학기술원 2011 NANO Vol.6 No.2
The effect of a thin In_(0.1)Ga_(0.9)As underlying layer on the structural properties of single layer In_(0.5_Ga_(0.5_As quantum dots (QDs) was investigated using atomic force microscopy (AFM), transmission electron microscopy (TEM) and high-resolution X-ray diffraction (HR-XRD) characterization. The size of dots formed on the surface is uniform but the density increases with the addition of In_(0.1_Ga_(0.9)As underlying between In_(0.5)Ga_(0.5)As QDs and GaAs buffer layer. This is consistent with the TEM characterization. The existence of thin underlying layer has caused the dots to have different crystal orientation as shown in TEM characterization. From the HR-XRD characterization, broad peak of In0.1Ga0.9As underlying layer and QDs has been observed. The wider width of the layer peak than the expected one has been attributed to the strain-relaxation-induced defects. The growth of a thin In_(0.1)Ga_(0.9)As underlying layer in the In_(0.5)Ga_(0.5)As/GaAs structures strongly affects the structural properties, which was also believed to influence the optical properties of QDs.
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