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        One-dimensional nanostructures based bio-detection

        Chartuprayoon, Nicha,Zhang, Miluo,Bosze, Wayne,Choa, Yong-Ho,Myung, Nosang V. Elsevier 2015 Biosensors & bioelectronics Vol.63 No.-

        <P><B>Abstract</B></P> <P>This paper presents a review on recent developments of one-dimensional (1-D) nanostructures based label-free chemiresistive/chemFET biosensors and the various sensing mechanisms used for biomolecular detection. The sensor performance including sensitivity, selectivity, and reliability is compared in terms of material synthesis of the sensor's element, relating surface functionalization schemes to their properties with respect to selected bioreceptors, its method of fabrication, and its intended operation. As a final point, we outline the prospects of chemiresistive/chemFET biosensors and recommend specific advancements in this field.</P> <P><B>Highlights</B></P> <P> <UL> <LI> One-dimensional label-free chemiresistive/chemFET biosensors are reviewed. </LI> <LI> Various sensing configuration and mechanisms are studied. </LI> <LI> Factors impacting the sensing performance are summarized. </LI> <LI> The prospects of chemiresistive/chemFET biosensors are outlined. </LI> </UL> </P>

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        Ultra-long bismuth telluride nanoribbons synthesis by lithographically patterned galvanic displacement

        Jung, Hyunsung,Rheem, Youngwoo,Chartuprayoon, Nicha,Lim, Jae-Hong,Lee, Kyu-Hwan,Yoo, Bongyoung,Lee, Kun-Jae,Choa, Yong-Ho,Wei, Peng,Shi, Jing,Myung, Nosang V. Royal Society of Chemistry 2010 Journal of materials chemistry Vol.20 No.44

        <P>We demonstrated the wafer level batch synthesis and fabrication of single semiconducting thermoelectric nanoribbon based devices by Lithographically Patterned Galvanic Displacement (LPGD). The shape, composition, and dimension of nanoribbons were tailored by adjusting deposition conditions. High resolution TEM images with fast Fourier transform (FFT)-converted selected area electron diffraction (SAED) patterns confirmed the formation of polycrystalline Bi<SUB>2</SUB>Te<SUB>3</SUB> intermetallic compound with a rhombohedral structure without elemental Te and Bi. The thickness dependent electrical resistivity of Bi<SUB><I>x</I></SUB>Te<SUB><I>y</I></SUB> nanoribbons shows a classic size effect due to the increase in surface boundary scattering. The as-synthesized nanoribbons were n-type semiconductors with no clear trend between field effect carrier mobility and composition, which might be attributed to the trapped charges at the interface between the channel and dielectric layer. The preliminary results on thermoelectric properties (<I>i.e.</I> Seebeck coefficient and power factor) show that the Seebeck coefficient of as-synthesized 0.1 µm thick Bi<SUB>30</SUB>Te<SUB>70</SUB> nanoribbon is comparable with bulk counterparts, however, the power factor was lower because of poor crystallinity which leads to higher resistivity.</P> <P>Graphic Abstract</P><P>Wafer-scale synthesis of single semiconducting BiTe nanoribbons was demonstrated by Lithographically Patterned Galvanic Displacement with controlled composition and dimensions. Composition and size dependent material, electrical, and thermoelectrical properties were systematically investigated. <IMG SRC='http://pubs.rsc.org/services/images/RSCpubs.ePlatform.Service.FreeContent.ImageService.svc/ImageService/image/GA?id=c0jm02058c'> </P>

      • Palladium/Single-Walled Carbon Nanotube Back-to-Back Schottky Contact-Based Hydrogen Sensors and Their Sensing Mechanism

        Zhang, Miluo,Brooks, Lauren L.,Chartuprayoon, Nicha,Bosze, Wayne,Choa, Yong-ho,Myung, Nosang V. American Chemical Society 2014 ACS APPLIED MATERIALS & INTERFACES Vol.6 No.1

        <P>A Schottky contact-based hydrogen (H<SUB>2</SUB>) gas sensor operable at room temperature was constructed by assembling single-walled carbon nanotubes (SWNTs) on a Si/SiO<SUB>2</SUB> substrate bridged by Pd microelectrodes in a chemiresistive/chemical field effect transistor (chemFET) configuration. The Schottky barrier (SB) is formed by exposing the Pd–SWNT interfacial contacts to H<SUB>2</SUB> gas, the analyte it was designed to detect. Because a Schottky barrier height (SBH) acts as an exponential bottleneck to current flow, the electrical response of the sensor can be particularly sensitive to small changes in SBH, yielding an enhanced response to H<SUB>2</SUB> gas. The sensing mechanism was analyzed by <I>I–V</I> and FET properties before and during H<SUB>2</SUB> exposure. <I>I–V</I><SUB><I>sd</I></SUB> characteristics clearly displayed an equivalent back-to-back Schottky diode configuration and demonstrated the formation of a SB during H<SUB>2</SUB> exposure. The <I>I–V</I><SUB><I>g</I></SUB> characteristics revealed a decrease in the carrier mobility without a change in carrier concentration; thus, it corroborates that modulation of a SB via H<SUB>2</SUB> adsorption at the Pd–SWNT interface is the main sensing mechanism.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/aamick/2014/aamick.2014.6.issue-1/am404328g/production/images/medium/am-2013-04328g_0008.gif'></P>

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        Tuning the gas sensing performance of single PEDOT nanowire devices

        Hangarter, Carlos M.,Hernandez, Sandra C.,He, Xueing,Chartuprayoon, Nicha,Choa, Yong Ho,Myung, Nosang V. Royal Society of Chemistry 2011 The Analyst Vol.136 No.11

        <P>This paper reports the synthesis and dopant dependent electrical and sensing properties of single poly(ethylenedioxythiophene) (PEDOT) nanowire sensors. Dopant type (<I>i.e.</I> polystyrenesulfonate (PSS<SUP>−</SUP>) and perchlorate (ClO<SUB>4</SUB><SUP>−</SUP>)) and solvent (<I>i.e.</I> acetonitrile and 1 : 1 water–acetonitrile mixture) were adjusted to change the conjugation length and hydrophilicity of nanowires which resulted in change of the electrical properties and sensing performance. Temperature dependent coefficient of resistance (TCR) indicated that the electrical properties are greatly dependent on dopants and electrolyte where greater disorder was found in PSS<SUP>−</SUP> doped PEDOT nanowires compared to ClO<SUB>4</SUB><SUP>−</SUP> doped nanowires. Upon exposure to different analytes including water vapor and volatile organic compounds, these nanowire devices displayed substantially different sensing characteristics. ClO<SUB>4</SUB><SUP>−</SUP> doped PEDOT nanowires from an acetonitrile bath show superior sensing responses toward less electronegative analytes and followed a power law dependence on the analyte concentration at high partial pressures. These tunable sensing properties were attributed to variation in the conjugation lengths, dopant type and concentration of the wires which may be attributed to two distinct sensing mechanisms: swelling within the bulk of the nanowire and work function modulation of Schottky barrier junction between nanowire and electrodes.</P> <P>Graphic Abstract</P><P>A “tailored-made”-made single PEDOT nanowire gas sensor which displays unique gas sensing behavior due to doping and structural differences arising from electropolymerization conditions. <IMG SRC='http://pubs.rsc.org/services/images/RSCpubs.ePlatform.Service.FreeContent.ImageService.svc/ImageService/image/GA?id=c0an01000f'> </P>

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