不純物에 依한 Barium Titanates의 電氣的 性質

박창엽,박상만,김현재,양재면 연세대학교 산업기술연구소 1975 논문집 Vol.6 No.1

Semiconductive Barium Titanates was prepared and its electrical properties were investigated. For the purpose of controlling in valency Al₂O₃, SiO₂, TiO₂ and Sb₂O₃were doped in Barium Titanates as additions. 0.1∼0.2mole% Sb₂O₃ was effective in reducing resistivity of the order of 10³ohm-cm. Semiconductive Barium Titanates showed anomalous positive character in the temperature dependency of resistivity. It is proposed that conduction in those samples is caused by exchanging electrons between ?? ions and ?? ions.

Al-Si쇼트키 장벽을 이용한 표면 트랜지스터에 관한 연구

박창엽 연세대학교 산업기술연구소 1985 논문집 Vol.17 No.2

In this study, the surface transistors using Al-Si Schottky barrier with thickness of tunnel oxide layer 40Å were fabricated by photolithography method and those characteristics were investigated. As a result, current gain and offset voltage of the devices, in P-type were 15, 0.3V, in N-type 13, 0.4V, respectively. The device is featured by very simple processing, and shows promise in a variety of application, including VLSI high speed IC's.

Al-nSi 및 Al-nSi-Al 쇼트기 베리어 다이오우드에 관한 연구

박창엽 연세대학교 산업기술연구소 1982 논문집 Vol.14 No.2

p-n 접합 보호환을 설치하는 대신 산화막을 만들어 파괴전압이 높고 이상적인 I-V 특성을 갖는 Al-nSi 및 Al-nSi-Al 쇼트키 다이오우드를 만들었다. 장벽의 높이는 수식에서 구한 값이 0.57eV이고 ??-V곡선에서 구한 값은 0.57∼0.62eV로서 별 차이가 없다. 이중접착의 저전압에서의 저항은 800Ω으로 단일 접착저항 400Ω의 2배가 되며 C-V 곡선에서 이중접착은 첨두치가 2개 존재하는 것은 2중접착은 단일 접착이 직열로 연결되어 있음을 나타낸다.

금속-산화막-반도체 전계효과 트랜지스터(MOSFET)의 정전용량-전압(C-V)특성에 대한 연구

박창엽,안형근 연세대학교 산업기술연구소 1985 논문집 Vol.17 No.2

In Metal - Oxide - Semiconductor Field Effect Transistors the current - voltage(I-V) characteristic and the gain were tested for various channel lengths and geometries. The capacitance - voltage characteristics were also tested for both MOSFET and simple MOS structure, and compared with each other at various temperature. The compared results showed that the most stable I-V characteristic was observed in circular geometry, the second was winding geometry and the third was straight geometry. MOSFET with shorter length has more stable characteristic especially in the N-channel type than in the P-channel type. Transconductance ?? of samples were measured in the range between 0.06[??] and 0.93[??]. It turned out that the N-channel type has higher breakdown voltage than the P-channel type. In C-V measurements the threshold voltage of simple MOS structure was -4.5[v] in N-type and -2.75[v] in P-type, while the voltage of diffused type was -3.87[v] in N-type and -2.3[v] in P-type.

PZT를 이용한 압전변압기의 전기적 특성에 관한 연구

박창엽,정익채 연세대학교 산업기술연구소 1981 논문집 Vol.13 No.1

Rectangular type piezoelectric ceramic transformer was made from Pb(Zr? Ti?)O₃, added with 1.2Wt% La₂O₃. The frequency characteristic of output voltage,linearity of input and output voltage by the supporting point, and the temperature characteristic of resonant frequency were measured. At the λ/2 and λresonance, the high voltage step-up ratio was shown. And at the λ/2 resonant frequency 34.37KHz of 4.14×1.35×0.2[cm] element, the voltage stepped up 11 times. And it was found that the increase of voltage step-up ratio depends on the decrease of element thickness. Output voltage and resonant frequency were changed sensitively with the supporting point, and the output voltage was saturated by increasing of input voltage, and the resonant frequency decreased as the temperature rised.

PLZT 세라믹을 이용한 광셔터 소자의 스위칭 특성

박창엽,유주현,홍재일 연세대학교 산업기술연구소 1988 논문집 Vol.20 No.2

In this paper, 9.5/65/35 PLZT ceramics were fabricated by the two-stage sintering technique. For the ceramics, electric, dielectric and microstructural properties were investigated, and also, Optical Shutter Devices Characteristics were measured with increasing the applied pulse voltage. As grain size was increased, relative permittivity,induced polarization and dp/dE were increased. The fabricated Optical Shutter Devices(thickness: 0.39 mm, IDT finger numbers; 17) showed the maximum optical output characteristic at 360 V.

MOSFET의 표면 채널 전도도의 온도특성

박창엽,배선기,손광식 연세대학교 산업기술연구소 1984 논문집 Vol.16 No.1

In this paper, PMOSFET was fabricated by following a standard MOSFET fabrication process and the relation between channel conductivity and temperature was investigated. In order to show this relation, the variation of drain current(??) and gate voltage(??) and threshold voltage (??) with temperature were measured. The experimental results show the transition of conduction mechanism with temperature and the effect of gate electric field on the temperature characteristics of channel conductivity. At lower gate voltage, negative and zero temperature coefficients were appeared at lower temperature range because of the decrement of charge mobility and positive temperature coefficient was appeared at higher temperature range because of the surface state ionization. At higher gate voltage, zero temperature coefficient was appeared because of the equal effect of surface state ionization and mobility decrement on conductivity. In the region where the surface state ionization is dominant mechanism, the value of ?? was typically-13~-18mV/C and the corresponding surface state density was 3.4x??~4.7x?? ?? ?? and the variation of threshold voltage with temperature was -10mV/C.

SnO₂/Si 이중접함의 전기 및 광학적 성질

朴昌燁,王鎭錫 연세대학교 산업기술연구소 1981 논문집 Vol.13 No.1

Recently, heterojunction solar cells with a conducting transparent film (SnO₂, In₂O₃ or SnO₂/In₂O₃ mixtures) on silicon have been reported by many investigators. These heterojunction solars cells offer the possibility of fabrication of low cost solar cells with performance characteristic suitable for large scale terrestrial applications. The conducting transparent film permits the tranmission of solar radiation directly to the active region with little or no attenuation. Here, after the SnO₂ film was deposited by electron beam evaporation upon n-Si wafers and slide glasses, the cell was heated in air at 280-360[℃] respectively for 1 hour. The SnO₂ film is about 1000[Å] thick. Depending upon temperature of heating, the cell's final efficiency, short circuit currentr, open circuit voltage, and fill factor was varied widely. The sheet resistance was increased in the 260-280[℃] temperature range and decreased with temperature increased above 280[℃]. % transmittance of SnO₂ film is increased by 10[%] after heat treatment in air. The spectral response spreads from 3900[Å] to 9000[Å] and this range is wider than that of commercial silicon solar cells. Voc, Isc, FF and η of the device annealed in air 320[℃] are 0,4[V], 20[mA/cm²] 0.65, 5.2[%] respectively.

Cr₂O₃가 고주파용 Pb(Mn⅓Mb⅔)O₃+PZT 세라믹스기판의 압전 특성에 미치는 영향

이개명,박창엽,김규수 연세대학교 산업기술연구소 1991 논문집 Vol.23 No.2

핫프레스법으로 제작된 ?? 세라믹스에 있어서 Cr2O3의 첨가량이 그 시편의 구조적특성, 유전특성, 압전특성, 온도안정성 및 포아손비에 미치는 영향을 조사하였다. Cr2O3의 첨가량의 범위가 0.3∼0.75[wt%]인 시편만이 포아손비가 1/3 이상으로 주파수 저하형 에너지포획 소자의 기판으로 사용될 수 있으며, 이 중에서 Cr2O3의 첨가량이 0.5[wt%]인 시편이 보다 우수한 압전특성과 안정된 온도특성을 갖고 있다. The effects of Cr2O3 addition on the structural, dielectric, piezoelectric properties, Poisson ratio and temperature stability of hot-pressed ?? ceramics were investigated. Only the specimens with Cr2O3 amount, 0.3∼0.75[wt%]can be used as the substrate for energy trapped devices of frequency lowering type, because their Poisson ratios are larger than 1/3. And the specimen with 0.5[wt%]Cr2O3 of them, has better piezoeletric properties, and more stable frequency temperature characteristics than the others.

장애인의 의료평가체계

진기남,장창엽 연세대학교 보건과학연구소 2000 보건과학논집 Vol.10 No.-