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Bup Ju Jeon 한국진공학회(ASCT) 2020 Applied Science and Convergence Technology Vol.29 No.6
Electromagnets suitable for large-scale electron cyclotron resonance (ECR) plasma systems consisting of linear microwaves of 2.45 ㎓ with a uniform electromagnetic field of 875 G were designed from simulation data. A thin film of fluorine-doped tin oxide was deposited at low temperature using the designed electromagnet to obtain the desired electromagnetic field. The simulation data and numerical analysis results for the electromagnetic field of the designed electromagnet and the formation of a large-scale ECR zone agreed well. A large-scale ECR zone with a magnetic field of 875 G was formed at 16 cm from the z-axis. The composition of the fluorine-doped tin oxide film deposited under the ECR zone of 16 ㎝ from the z-axis was dependent on the input current of the electromagnet, which affected the deposition region and the ECR zone. Within this experimental range, the distribution of electrical resistivity of the thin film was influenced by the electromagnetic field.
Control of Optical Properties by the Stepwise Chemical and Plasma Spray Treatment of Polycarbonate
Bup Ju Jeon 한국진공학회(ASCT) 2018 Applied Science and Convergence Technology Vol.27 No.6
Using the Polycarbonate (PC) polymer sheet, the change in optical properties was compared by changing the surface shape with the primary chemical surface treatment and plasma spray treatment. Plasma treatment affects surface composition changes and has a small effect on surface structure changes. Changes in surface structure are important to control the optical characteristics of the PC polymer sheet. Thus, it was possible to control changes in surface composition and changes in surface structure through secondary plasma treatment after primary chemical treatment. The primary chemical treatment had a small effect on changes in the chemical composition of the surface, but the surface roughness was influenced by swelling. The secondary plasma spray treatment affected optical properties changes, which allowed control of changes in surface structure after primary chemical treatment. At the same time after the first chemical treatment, the secondary plasma treatment was easy to control of optical properties by changing the surface structure as well as the surface properties due to changes in chemical composition by surface cross-linking reaction.
저온 산화공정에 의해 낮은 D<sub>it</sub>를 갖는 실리콘 산화막의 제조
전법주,정일현,Jeon, Bup-Ju,Jung, Il-Hyun 한국공업화학회 1998 공업화학 Vol.9 No.7
ECR 산소플라즈마를 이용하여 저온 확산법에 의해 서로 다른 종류의 기판에 마이크로파 출력, 기판의 위치 등을 실험변수로 실리콘 산화막을 제조하고, 열처리 전 후 물리 화학적 특성을 분석하여 Si/O 의 조성비, 산화막 표면의 morphology와 전기적 특성과의 관계를 살펴보았다. 마이크로파 출력이 높은 영역에서, 산화속도는 증가하지만 식각으로 인하여 표면조도가 증가하였다. 따라서 막내에 결함이 증가하고 기판자체에 걸리는 DC bias의 증가로 기상에 존재하는 산소 양이온이 다량 함유되어 산화막의 질이 저하되었다. 기판의 종류에 따라 기상에 존재하는 산소 양이온의 함량은 Si(100) <Si(111) < poly Si 순서로 나타났다. 열처리함으로써 $Si/SiO_2$계면에 존재하는 결함들은 줄일 수 있으나, 고정전하와 계면포획전하 밀도는 열처리와 무관하고 단지 기상에 존재하는 반응성 산소이온의 양과 기판자체 DS bias에 의존하였다. 마이크로파 출력이 300, 400 W인 실험조건에서 표면조도가 낮고, 계면결함밀도가 ${\sim}9{\times}10^{10}cm^{-2}eV^{-1}$로 $Si/SiO_2$계면에서 결함이 적은 양질의 산화막이 얻어졌다. In this work, the $SiO_2$ films on the silicon substrate with different orientations were first prepared by the low temperature process using the ECR plasma diffusion as a function of microwave power and oxidation time. Before and after thermal treatment, the surface morphology, Si/O ratio from physicochemical properties, and the electrical properties of the oxide films were also investigated. The oxidation rate increased with microwave power, while surface morphology showed the nonuniform due to etching. The film quality, therefore, was lowered with increasing the defect by etching and the content of positive oxide ions in the oxide films from bulk by higher self-DC bias. The content of positive oxide ions in the oxide films with different Si orientations showed Si(100) < Si(111) < poly Si. The defects in $Si/SiO_2$ interface of $SiO_2$ film could be decreased by annealing, while $Q_{it}$ and $Q_f$ were independent of thermal treatment and the dependent on concentration of reactive oxide ions and self-DC bias of substrate. At microwave power of 300, and 400 W, the high quality $SiO_2$ film that had lower surface roughness and defect in $Si/SiO_2$ interface was obtained. The value of interface trap density, then, was ${\sim}9{\times}10^{10}cm^{-2}eV^{-1}$.
Hudaya, Chairul,Jeon, Bup Ju,Verdianto, Ariono,Lee, Joong Kee,Sung, Yung-Eun Elsevier 2019 APPLIED SURFACE SCIENCE - Vol.490 No.-
<P><B>Abstract</B></P> <P>Antiglare and antireflection materials take considerable research attention due to its important role in transparent optical materials for various purposes. In this study, we employed layer-by-layer coating materials consist of SiO<SUB>2</SUB> and TiZrO<SUB>2</SUB> deposited on etched-surface glass substrate using dual electron beam evaporator system. The surface morphology investigated by using scanning electron microscopy (SEM) exhibited the microstructure patterns of glass surface. The cross-sectional image of transmission electron microscopy (TEM) showed uniformly layer-by-layer coating materials with the thickness of ~20–80 nm. The Auger electron spectroscopy (AES) revealed the depth profiles of elemental composition of surface layer-by-layer coating, confirming the presence of elements of SiO<SUB>2</SUB> and TiZrO<SUB>2</SUB> layers. In addition, the layer-by-layer coated glass surface performed the hydrophobic properties with contact angle of 69°. The microstructure surface treatment and layer-by-layer coating have successfully decreased the reflectance (~3%) and increased the transmittance of the treated glass (~91%), opening the possibility for the applications of any optical devices.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Layer-by-layer deposition of SiO<SUB>2</SUB> and TiZrO<SUB>2</SUB> as antiglare and antireflection </LI> <LI> Multilayer thin film coating with increased transmittance </LI> <LI> Microstructure patterns through surface etching with hydrophobic capability </LI> <LI> Homogeneous coating materials through dual electron beam evaporator </LI> <LI> Potential applications for PV panel, laser, optical lenses and display devices </LI> </UL> </P>
γ-Alumina에 담지된 산화구리에 의한 SO<sub>2</sub>의 제거에 관한 수치모사
전법주,홍인권,박경애,정일현,Jeon, Bup Ju,Hong, In Kwon,Park, Kyung Ai,Jung, Il Hyun 한국공업화학회 1994 공업화학 Vol.5 No.3
세공분포가 서로 다른 두 종류(KHT, X-5)의 ${\gamma}$-알루미나 pellet에 아황산가스를 흡착 제거시킬 경우 반응이 진행되면서 각각의 세공벽에 반응생성층이 형성되어 반응속도 상수($K_v$), 세공률(${\varepsilon}_p$), 유효내부 확산계수($D_e$)의 변화와 세공반경이 줄어들어 세공막힘 현상이 일어나게 된다. 이들 영향을 고려하여 세공분포를 이용한 Random pore model로 최적반응온도 $450^{\circ}C$에서 산화구리의 각 담지농도(4, 6, 8, l0 wt%)와 아황산가스의 농도(1000, 2000ppm)에 대한 전환율을 수학적 모델로부터 계산하였다. 산화구리의 담지농도가 증가할수록 세공내의 유효반응 표면적과 세공률의 감소, 내부확산저항의 증가, 미세세공의 세공막힘 현상으로 전환율은 감소하였다. 총괄 전환율은 ${\gamma}$-알루미나 pallet의 표면 국부 전환율에 크게 의존하였으며 산화구리의 담지농도가 낮고 아황산가스의 농도가 클수록 증가하였다. 반응기에 유입되는 아황산가스의 유속은 반응초기 CuO의 전환율에 영향을 주었고 세공분포가 발달하여 세공율이 큰 ${\gamma}$-알루미나 pellet일수록 전환율은 높게 나타났다. Numerical solutions were obtained to the model equations for various of the parameters characterizing the pore structure, effective internal diffusion, and the chemical reaction constant. The conversion was decreased with the cause of pore closure at the surface of reacting particles, reduction of porosity, surface area of reaction and effective diffusion coefficient in the solid with the progress of reaction. Total conversion was strongly dependent on the local conversion at surface. According to the decreasing of impregnated concentration of the copper oxide and the increase of the flue gases concentration, total conversion was increased. The conversion was affected by gas flow rate and pore size distribution in the reacting solid.