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THRESHOLD AND SATURATION VOLTAGES MODELING OF CARBON NANOTUBE FIELD EFFECT TRANSISTORS (CNT-FETS)
JOSE M. MARULANDA,ASHOK SRIVASTAVA,ASHWANI K. SHARMA 성균관대학교(자연과학캠퍼스) 성균나노과학기술원 2008 NANO Vol.3 No.3
We present analytical model equations for threshold voltage (Vth) and saturation voltage (Vds,sat) characterizing CNT-FETs. These model equations have been obtained from the charge and potential distributions between the gate and substrate in a CNT-FET. It is shown that both Vth and Vds,sat are strongly dependent on chiral vectors of CNTs. The results show close agreement between theoretical and graphical modeling techniques. It is also shown that the calculated Vth of a CNT-FET with chiral vector (3,1) is in close agreement with the corresponding published work.