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- 저자 : A. K. M. Ashiquzzaman Shawon (검색결과 2 건)
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Md. Mahmudur Rahman,A. K. M. Ashiquzzaman Shawon,Soon‑Chul Ur 대한금속·재료학회 2021 ELECTRONIC MATERIALS LETTERS Vol.17 No.1
Zintl compounds were recognized as very good thermoelectric candidate due to their characteristics electron-crystal phononglassproperties. Mg3Sb2is a known Group II–V Zintl semiconductor. This compound is a well-established thermoelectricmaterial and many of recent works focus on this compound due to its intrinsic low thermal conductivity. The band gap ofthis compound has been shown to be optimum, making it a promising thermoelectric material. This work introduces a newsynthetic method and analyzes the thermoelectric properties found using this method. The single phase of Mg3Sb2wassynthesized by melting elemental shots at 1173 K for 1 hour in a controlled inert Ar gas atmosphere in a tapped graphitecrucible followed by vacuum hot pressing at 873 K for 4 hours. X-ray diffraction and scanning electron microscopy werecarried out to investigate existing phases and surface morphology respectively. Thermoelectric properties in terms of Seebeckcoefficient, electrical conductivity, and thermal conductivity were evaluated and the results are discussed in comparison toanalogous studies. Transport properties were also evaluated and discussed. Single phase magnesium antimonide was foundwith a nominal formula of Mg3.8Sb2and showed a comparable ZT value which is ~ 0.24 at 873 K.
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Improvement of Thermoelectric Properties of AlSb by Incorporation of Mg as p‑type Dopant
A. K. M. Ashiquzzaman Shawon,Md Mahmudur Rahman,Soon‑Chul Ur 대한금속·재료학회 2020 ELECTRONIC MATERIALS LETTERS Vol.16 No.6
Due to the sizably larger direct band gap of 2.26 eV of AlSb, the thermoelectric properties of intrinsic AlSb is considerablylow. Despite a promising Seebeck coefficient, the low electrical conductivity and high thermal conductivity has limited theimprovement of thermoelectric figure of merit. Replacing small amounts of Al by Mg can increase the number of holes inthe solid-state, effectively helping tune the carrier concentration. This work explores the effect of Mg doping in AlSb. Theincorporation of Mg at Al sites has increased the electrical conductivity without decreasing the Seebeck coefficient detrimentally. The thermoelectric figure of merit has shown improvement despite the large thermal conductivity observed. The work additionally explores the possibility of improving thermoelectric properties further by forming a composite with β-Zn4Sb3. The highest thermoelectric figure of merit was found to be 0.075 at 873 K, which is 6 times higher than that in intrinsic AlSb.
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