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Jang, A.-Rang,Lee, Young-Woo,Lee, Sang-Seok,Hong, John,Beak, Seong-Ho,Pak, Sangyeon,Lee, Juwon,Shin, Hyeon Suk,Ahn, Docheon,Hong, Woong-Ki,Cha, SeungNam,Sohn, Jung Inn,Park, Il-Kyu The Royal Society of Chemistry 2018 Journal of Materials Chemistry A Vol.6 No.17
<P>Correction for ‘Electrochemical and electrocatalytic reaction characteristics of boron-incorporated graphene <I>via</I> a simple spin-on dopant process’ by A-Rang Jang <I>et al.</I>, <I>J. Mater. Chem. A</I>, 2018, DOI: 10.1039/c7ta09517a.</P>
Jang, A-Rang,Hong, Seokmo,Hyun, Chohee,Yoon, Seong In,Kim, Gwangwoo,Jeong, Hu Young,Shin, Tae Joo,Park, Sung O.,Wong, Kester,Kwak, Sang Kyu,Park, Noejung,Yu, Kwangnam,Choi, Eunjip,Mishchenko, Artem,Wi American Chemical Society 2016 Nano letters Vol.16 No.5
<P>Large-scale growth of high-quality hexagonal boron nitride has been a challenge in two-dimensional-material-based electronics. Herein, we present wafer-scale and wrinkle-free epitaxial growth of multilayer hexagonal boron nitride on a sapphire substrate by using high-temperature and low-pressure chemical vapor deposition. Microscopic and spectroscopic investigations and theoretical calculations reveal that synthesized hexagonal boron nitride has a single rotational orientation with AA' stacking order. A facile method for transferring hexagonal boron nitride onto other target substrates was developed, which provides the opportunity for using hexagonal boron nitride as a substrate in practical electronic circuits. A graphene field effect transistor fabricated on our hexagonal boron nitride sheets shows clear quantum oscillation and highly improved carrier mobility because the ultraflatness of the hexagonal boron nitride surface can reduce the substrate-induced degradation of the carrier mobility of two-dimensional materials.</P>
Jang, A-Rang,Lee, Young-Woo,Lee, Sang-Seok,Hong, John,Beak, Seong-Ho,Pak, Sangyeon,Lee, Juwon,Shin, Hyeon Suk,Ahn, Docheon,Hong, Woong-Ki,Cha, SeungNam,Sohn, Jung Inn,Park, Il-Kyu Royal Society of Chemistry 2018 Journal of Materials Chemistry A Vol.6 No.17
<P>Chemical doping is one of the most effective methods to tune the electrochemical properties of graphene. We report a simple and relatively low-temperature process for the fabrication of boron doped graphene by using a spin-on dopant (SOD) method. SOD-treated graphene was successfully doped with boron atoms at a temperature lower than 600 °C. The fabricated boron doped graphene exhibits a specific capacitance of 4 mF cm<SUP>−2</SUP>, as well as a high-rate performance of 91.9% at 200 mV s<SUP>−1</SUP> as an electrode material for pseudocapacitors. It also shows excellent oxygen reduction activity and durability with a current retention of 91.4% and methanol-tolerance properties. These features are beneficial for catalyst applications in the oxygen reduction reaction due to well-engineered boron sites with high electrical conductivity and many active sites for electrochemical reactions.</P>
Reversibly Light-Modulated Dirac Point of Graphene Functionalized with Spiropyran
Jang, A-Rang,Jeon, Eun Kyung,Kang, Dongwoo,Kim, Gwangwoo,Kim, Byeong-Su,Kang, Dae Joon,Shin, Hyeon Suk American Chemical Society 2012 ACS NANO Vol.6 No.10
<P>Graphene has been functionalized with spiropyran (SP), a well-known photochromic molecule. It has been realized with pyrene-modified SP, which has been adsorbed on graphene by π–π interaction between pyrene and graphene. The field-effect transistor (FET) with SP-functionalized graphene exhibited n-doping effect and interesting optoelectronic behaviors. The Dirac point of graphene in the FET could be controlled by light modulation because spiropyran can be reversibly switched between two different conformations, a neutral form (colorless SP) and a charge-separated form (purple colored merocyanine, MC), on UV and visible light irradiation. The MC form is produced during UV light irradiation, inducing the shift of the Dirac point of graphene toward negative gate voltage. The reverse process back to the neutral SP form occurred under visible light irradiation or in darkness, inducing a shift of the Dirac point toward positive gate voltage. The change of the Dirac point by UV and visible light was reproducibly repeated. SP molecules also improved the conductance change in the FET device. Furthermore, dynamics on conversion from MC to SP on graphene was different from that in solution and solid samples with SP-grafted polymer or that on gold nanoparticles.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/ancac3/2012/ancac3.2012.6.issue-10/nn303539y/production/images/medium/nn-2012-03539y_0007.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/nn303539y'>ACS Electronic Supporting Info</A></P>
Growth of High-Crystalline, Single-Layer Hexagonal Boron Nitride on Recyclable Platinum Foil
Kim, Gwangwoo,Jang, A-Rang,Jeong, Hu Young,Lee, Zonghoon,Kang, Dae Joon,Shin, Hyeon Suk American Chemical Society 2013 Nano letters Vol.13 No.4
<P>Hexagonal boron nitride (h-BN) is gaining significant attention as a two-dimensional dielectric material, along with graphene and other such materials. Herein, we demonstrate the growth of highly crystalline, single-layer h-BN on Pt foil through a low-pressure chemical vapor deposition method that allowed h-BN to be grown over a wide area (8 × 25 mm<SUP>2</SUP>). An electrochemical bubbling-based method was used to transfer the grown h-BN layer from the Pt foil onto an arbitrary substrate. This allowed the Pt foil, which was not consumed during the process, to be recycled repeatedly. The UV–visible absorption spectrum of the single-layer h-BN suggested an optical band gap of 6.06 eV, while a high-resolution transmission electron microscopy image of the same showed the presence of distinct hexagonal arrays of B and N atoms, which were indicative of the highly crystalline nature and single-atom thickness of the h-BN layer. This method of growing single-layer h-BN over large areas was also compatible with use of a sapphire substrate.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/nalefd/2013/nalefd.2013.13.issue-4/nl400559s/production/images/medium/nl-2013-00559s_0001.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/nl400559s'>ACS Electronic Supporting Info</A></P>
Wang, Bin,Huang, Ming,Tao, Li,Lee, Sun Hwa,Jang, A-Rang,Li, Bao-Wen,Shin, Hyeon Suk,Akinwande, Deji,Ruoff, Rodney S. American Chemical Society 2016 ACS NANO Vol.10 No.1
<P>We explored a support-free method for transferring large area graphene films grown by chemical vapor deposition to various fluoric self-assembled mono layer (F-SAM) modified substrates including SiO2/Si wafers, polyethylene terephthalate films, and glass. This method yields clean, ultrasmooth, and high-quality graphene films for promising applications such as transparent, conductive, and flexible films due to the absence of residues and limited structural defects such as cracks. The F-SAM introduced in the transfer process can also lead to graphene transistors with enhanced field-effect mobility (up to 10,663 cm(2)/Vs) and resistance modulation (up to 12x) on a standard silicon dioxide dielectric. Clean graphene patterns can be realized by transfer of graphene onto only the F-SAM modified surfaces.</P>
Pak, Sangyeon,Jang, A-Rang,Lee, Juwon,Hong, John,Giraud, Paul,Lee, Sanghyo,Cho, Yuljae,An, Geon-Hyoung,Lee, Young-Woo,Shin, Hyeon Suk,Morris, Stephen M.,Cha, SeungNam,Sohn, Jung Inn,Kim, Jong Min The Royal Society of Chemistry 2019 Nanoscale Vol.11 No.11
<P>Monolayered, semiconducting molybdenum disulfide (MoS2) is of considerable interest for its potential applications in next-generation flexible, wearable, and transparent photodetectors because it has outstanding physical properties coupled with unique atomically thin dimensions. However, there is still a lack of understanding in terms of the underlying mechanisms responsible for the photoresponse dynamics, which makes it difficult to identify the appropriate device design strategy for achieving a fast photoresponse time in MoS2 photodetectors. In this study, we investigate the importance of surface functionalization on controlling the charge carrier densities in a MoS2 monolayer and in turn the corresponding behavior of the photoresponse in relation to the position of the Fermi-level and the energy band structure. We find that the p-doping and n-doping, which is achieved through the surface functionalization of the MoS2 monolayer, leads to devices with different photoresponse behavior. Specifically, the MoS2 devices with surface functional groups contributing to p-doping exhibited a faster response time as well as higher sensitivity compared to that observed for the MoS2 devices with surface functional groups contributing to n-doping. We attribute this difference to the degree of bending in the energy bands at the metal-semiconductor junction as a result of shifting in the Fermi-level position, which influences the optoelectronic transport properties as well as the recombination dynamics leading to a low dark and thus high detectivity and fast decay time. Based upon these findings, we have also demonstrated the broad applicability of surface functionalization by fabricating a flexible MoS2 photodetector that shows an outstanding decay time of 0.7 s, which is the fastest response time observed in flexible MoS2 detectors ever reported.</P>
Hong, John,Kim, Byung-Sung,Yang, Seungmo,Jang, A-Rang,Lee, Young-Woo,Pak, Sangyeon,Lee, Sanghyo,Cho, Yuljae,Kang, Dongwoo,Shin, Hyeon Suk,Hong, Jin Pyo,Morris, Stephen M.,Cha, SeungNam,Sohn, Jung Inn Royal Society of Chemistry 2019 Journal of Materials Chemistry A Vol.7 No.6
<P>Traditional synthetic routes for transition metal sulfides typically involve solution and thermal-based processes to exploit their favorable pseudo-capacitive properties. However, there is a practical need to develop alternative processes to fabricate metal sulfide electrodes because of the time-consuming processes (>12 h), additional heat-treatment to active reactants, relatively high post-heat-treatment temperature (200-400 °C) and non-scalable nature of existing synthetic routes. Herein, utilizing a solution-based sulfur precursor, one-dimensional single-crystalline Cu2S nanostructures have been successfully prepared <I>via</I> a solution-based direct synthesis process within 10 min at room temperature without the need for thermal treatment steps. The fabricated electrode exhibits a capacitance of 750 mF cm<SUP>−2</SUP> at a current density of 2 mA cm<SUP>−2</SUP>. Moreover, the rate capacitance is maintained at about 82.3% as the current density is increased to 40 mA cm<SUP>−2</SUP>, and the capacity retains 90.5% of the initial value after 20 000 cycles. Importantly, as this method involves a solution-based formulation it is compatible with roll-to-roll processes, which is promising for mass and scalable production of the electrodes. The synthetic method ensures a facile and efficient approach to fabricating scalable one-dimensional single crystalline Cu2S nanostructures, highlighting the uniqueness of the solution-based sulfur activation method.</P>
Java DOM Parsers to Convert KGML into SBML and BioPAX Common Exchange Formats
Lee, Kyung-Eun,Jang, Myung-Ha,Rhie, A-Rang,Thong, Chin Ting,Yang, San-Duk,Park, Hyun-Seok Korea Genome Organization 2010 Genomics & informatics Vol.8 No.2
Integrating various pathway data collections to create new biological knowledge is a challenge, for which novel computational tools play a key role. For this purpose, we developed the Java-based conversion modules KGML2SBML and KGML2BioPAX to translate KGML (KEGG Markup Language) into a couple of common data exchange formats: SBML (Systems Biology Markup Language) and BioPAX (Biological Pathway Exchange). We hope that our work will be beneficial for other Java developers when they extend their bioinformatics system into SBML- or BioPAX-aware analysis tools. This is part of our ongoing effort to develop an ultimate KEGG-based pathway enrichment analysis system.