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DC 마그네트론 스터링법을 이용하여 증착한 Ga, Al, In 첨가 ZnO 박막의 특성
박상은(Sang-eun Park),박세훈(Se-hun Park),Lue jie,송풍근(Pung-Keun Song) 한국표면공학회 2008 한국표면공학회지 Vol.41 No.4
Trivalent ions (Ga, Al, In) doped ZnO films were deposited by DC magnetron sputtering on non-alkali glass substrate at substrate temperature of 300℃. We used the different three types of high density (95%~) ceramic sintered disks (doped with Ga₂O₃; 6.65 wt%, Al₂O₃; 3.0 wt%, In₂O₃; 9.54 wt%). This study examined the effect of different dopants (Ga, Al, In) on the electrical, structural, and optical properties of the films. The lowest resistivity of 5.14×10?⁴ Ω㎝ and the highest optical band gap of 3.74 eV were obtained by Ga doped ZnO (GZO) film. All the films had a preferred orientation along the (002) direction, indicating that the growth orientation has a c-axis perpendicular to the substrate surface. The average transmittance of the films was more than 85% in the visible range.