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유상수(Yu Sang-Soo) 역사실학회 2012 역사와실학 Vol.47 No.-
This paper deals with the public information policy among a variety of policies established after the establishment of the May 16 military government. A public information policy is originally for promoting a government's numerous activities, but the one during the military regime after the May 16 coup went beyond the negative meaning, carrying a positive meaning of securing legitimacy. The public information policy was closely associated with the stages of the revolution planned by the leading forces of the coup as the policy was considered a tool for realizing the plan. They asserted the eradication of the old evils as 'the first stage.' Then as 'the second stage,' they carried out organizational reforms with the purpose of strengthening the economic development and anticommunism that they had emphasized. During these processes, the public information organization was expanded in comparison with that of the previous governments. As the tasks for 'the third stage' needed to be performed along with the completion of the 'second stage' tasks by July 1961, the characteristics of the public information policy changed. The tasks for 'the third stage' were to be newly carried out by the leading forces of the coup. The public information policy until 1962 was implemented while this 'third task' tasks were established. The reinforcement of publicity activities and broadcasting for farming and fishing communities, the promotions of culture and arts, and the expansion of foreign publicity activities were aimed at the 'third stage' tasks. The 'third stage' tasks included public enlightenment and guidance through publicity activities, which were based on a perception that 'the leading forces of the revolution' should lead the general public with reformist inclinations and new ideologies for Korea to develop into a advanced nation. The military government's public information policy developed in this wise did not appear to be effective. This is because it was not smoothly done to transfer power to civil government for the continuity of all of the policies developed by the military regime. A bill for constitutional amendment was put to a plebiscite on December 17, 1962. The Office of Public Information conducted a public opinion poll focused on those who favored the bill on January 12, 1963, and the results showed immense support for the military government and President Park Chung-Hee. Nevertheless, President Park won the presidential election in 1963 by a narrow margin, only 150,000 votes, in spite of the advantage of staying in power. This result indicates that public support for President Park and the military government was actually low and that the outcomes of the public information policy aggressively pursued by the military regime proved not to be effective.
Hyeong Kyu Lim(임형규),Tran Thi Lan Anh(찬티난안),Sang Soo Yu(유상수),Kui-Jong Baek(백귀종),Young Eon Ihm(임영언),Dojin Kim(김도진),Hyojin Kim(김효진),Chang Soo Kim(김창수) 한국자기학회 2009 韓國磁氣學會誌 Vol.19 No.3
Magnetic phases of polycrystalline Ge<SUB>1 ? x</SUB>Mn<SUB>x</SUB> thin films were studied. The Ge<SUB>1 ? x</SUB>Mn<SUB>x</SUB> thin films were grown at 400 ℃ by using a molecular beam epitaxy. The Ge<SUB>1 ? x</SUB>Mn<SUB>x</SUB> thin films were p-type and electrical resistivities were 4.0 × 10<SUP>?2</SUP>~1.5 × 10<SUP>?4</SUP> ohm-㎝. Based on the analysis of magnetic characteristics and microstructures, it was concluded that the ferromagnetic phase formed on the Ge<SUB>1 ? x</SUB>Mn<SUB>x</SUB>/SiO₂/Si(100) thin films was Ge₃Mn? phase which has about 310 K of Curie temperature. Moreover, the Ge<SUB>1 ? x</SUB>Mn<SUB>x</SUB> thin film which had Ge₃Mn? phase showed the negative magnetoresistance to be about 9% at 20 K when the magnetic field of 9 T was applied.
비정질 Ge<SUB>1 − x</SUB>Mn<SUB>x</SUB> 박막의 전기적, 자기적 특성에 미치는 열처리 효과
이병철(Byeong Cheol Lee),김동휘(Dong Hwi Kim),찬티난안(Tran Thi Lan Anh),임영언(Young Eon Ihm),김도진(Dojin Kim),김효진(Hyojin Kim),유상수(Sang Soo Yu),백귀종(Kui Jong Baek),김창수(Chang Soo Kim) 한국자기학회 2009 韓國磁氣學會誌 Vol.19 No.3
Amorphous Ge<SUB>1 ? x</SUB>Mn<SUB>x</SUB> semiconductor thin films grown by low temperature vapor deposition were annealed, and their electrical and magnetic properties have been studied. The amorphous thin films were 1,000~5,000 A thick. Amorphous Ge<SUB>1 ? x</SUB>Mn<SUB>x</SUB> thin films were annealed at 300 ℃, 400 ℃, 500 ℃, 600 ℃ and 700 ℃ for 3 minutes in high vacuum chamber. X-ray diffraction analysis reveals that as-grown Ge<SUB>1 ? x</SUB>Mn<SUB>x</SUB> semiconductor thin films are amorphous and are crystallized by annealing. Crystallization temperature of amorphous Ge<SUB>1 ? x</SUB>Mn<SUB>x</SUB> semiconductor thin films varies with Mn concentration. Amorphous Ge<SUB>1 ? x</SUB>Mn<SUB>x</SUB> thin films have p-type carriers and the carrier type is not changed during annealing, but the electrical resistivity increases with annealing temperature. Magnetization characteristics show that the as-grown amorphous Ge<SUB>1 ? x</SUB>Mn<SUB>x</SUB> thin films are ferromagnetic and the Curie temperatures are around 130 K. Curie temperature and saturation magnetization of annealed Ge<SUB>1 ? x</SUB>Mn<SUB>x</SUB> thin films increase with annealing temperature. Magnetization behavior and X-ray analysis implies that formation of ferromagnetic Ge3Mn5 phase causes the change of magnetic and electrical properties of annealed Ge<SUB>1 ? x</SUB>Mn<SUB>x</SUB> thin films.
비정질 Ge<SUB>1 − x</SUB>Mn<SUB>x</SUB> 박막의 자기수송특성에 미치는 열처리 효과
김동휘(Dong Hwi Kim),이병철(Byeong Cheol Lee),찬티난안(Tran Thi Lan Anh),임영언(Young Eon Ihm),김도진(Dojin Kim),김효진(Hyojin Kim),유상수(Sang Soo Yu),백귀종(Kui Jong Baek),김창수(Chang Soo Kim) 한국자기학회 2009 韓國磁氣學會誌 Vol.19 No.4
Amorphous Ge<SUB>1 ? x</SUB>Mn<SUB>x</SUB> semiconductor thin films grown by low temperature vapor deposition were annealed at various temperatures from 400 to 700 ℃ for 3 minutes in high vaccum chamber. The electrical and magnetotransport properties of as-grown and annealed samples have been studied. X-ray diffraction patterns analysis revealed that the samples still maintain amorphous state after annealling at 500 ℃ for 3 minutes and they were crystallized when annealing temperature increase to 600 ℃. Temperature dependence of resistivity measurement implied that as-grown and annealed Ge<SUB>1 ? x</SUB>Mn<SUB>x</SUB> films have semiconductor characteristics, the increase of resistivity with annealling temperature was obseved. The 700 ℃-annealed sample exhibited negative magnetoresistance (MR) at low temperatures and the MR ratio was ~8.5% at 10 K. The asymmetry was present in all MR curves. The anomalous Hall Effect was also observed at 250 K.