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조용재(Yong Jai Cho),조현모(Hyun Mo Cho),이윤우(Yun Woo Lee),남승훙(Seung Hoon Nahm) 대한기계학회 2003 대한기계학회 춘추학술대회 Vol.2003 No.11
We have applied spectroscopic ellipsometry to investigate high-k dielectric thin films and<br/> correlate their optical properties with fabrication processes, in particular, with high temperature<br/> annealing. The use of high-k dielectrics such as HfO2, Ta2 O5, TiO2 , and ZrO2 as the replacement<br/> for SiO2 as the gate dielectric in CMOS devices has received much attention recently due to its<br/> high dielectric constant. From the characteristics found in the pseudo-dielectric functions or the<br/> Tauc-Lorentz dispersions, the optical properties such as optical band gap, polycrystallization, and<br/> optical density will be discussed.