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RF 플라즈마 CVD 프로세스의 전계제어에 의한 그래핀 나노월 성장 연구
한상보(SangBo Han) 한국조명·전기설비학회 2014 조명·전기설비학회논문지 Vol.28 No.9
This work carried out for the effective synthesis characteristics of graphene nanowall film by controlling the electric field in a RF plasma CVD process. For that, the bipolar bias voltage was applied to the substrate such as Si and glass materials for the best chemical reaction of positive and negative charges existing in the plasma. For supplying the seed formation sites on substrate and removing the oxidation layer on the substrate surface, the electron bombardment into substrates was performed by a positive few voltage in hydrogen plasma. After that, hydrocarbon film, which is not a graphene nanowall, was deposited on substrates under a negative bias voltage with hydrogen and methane gases. At this step, the film on substrates could not easily identify due to its transparent characteristics. However, the transparent film was easily changed into graphene nanowall by the final hydrogen plasma treatment process. The resultant raman spectra shows the existence of significant large 2D peaks corresponding to the graphene.
대기압 플라즈마 프로세스에 의한 수소 발생 효율 향상 연구
한상보(SangBo Han) 한국조명·전기설비학회 2016 조명·전기설비학회논문지 Vol.30 No.12
In this paper, the correlation between hydrogen generation from methanol molecules and the emission intensity of second positive band system from nitrogen molecules was discussed in the atmospheric pressure plasma process. In particular, the variation of emission intensity on SP band by changing the applied voltage, measurement position, and methanol quantities was investigated. First, tt was found that the hydrogen generation decreased with the recombination process between oxygen atom radicals and hydrogen atoms by adding oxygen molecules. Second, it was found that the hydrogen generation increased by the increase of initial methanol quantities, but the emission intensity of SP band decreased by the increase of the electron collision probability with methanol molecules. Finally, it was found that the emission intensity of SP band increased as to the increase of the applied voltage.