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최춘태,정양준,김병호,이형재 全北大學校 基礎科學硏究所 1984 基礎科學 Vol.7 No.1
Electrical conductivity and Hall coefficient were calculated at 297 K as a function of Fermi energy measured from the bottom of the Eqc band The solution of Boltzmann equation was obtained using the Fletcher and Butcher method, with various scattering mechanisms, not relying on relaxation time approximation. Nonparabolic energy band was assumed and admixed wave function consistent with the band structure was also taken into account. The resultant transport calulations provide a tool which can be used in assessing n-type GaAs in a routine way only by measuring conductivity and Hall coefficient at 297 K.
최춘태 順天大學校 1991 論文集 Vol.10 No.1
The study on n-type GaAs was carried out as a starting point of investigating the indium and oxygen impurity effects on deep levles, aiming at growing defect-free semi-insulating GaAs with low impurity density using the horizontal Bridgman technique. All the as-grown crystals obtained in this work revealed n-type conduction. The electrical conductivity andthe Hall coefficient were measured on the smaples as a function of temperature. Fore-band model involving the ??, L₁, heavy-and light-hole bands was used in analyzing the experimental data and the results show that the ionized impurity scattering is dominant at room temperature and the space charge scattering negligible. The deep levels determined here are classified as four different levels with the activation energies of 0.14, 0.31, 0.44, and 0.75eV, respectively. EL2 level (0.75eV) was observed only in two samples of carrier density∼?? and dominant in these samples.
GaAs의 EL2 준위 및 그와 관련된 준안정상태 EL2 준위
최춘태,김병호,이형재 순천대학교 기초과학연구소 1991 基礎科學硏究誌 Vol.2 No.-
Photocurrent and related characteristics in In-doped semi-insulating GaAs crystals have been investigated, especially at the optical quenching and thermal recovery stages. For T≤50K, the persistent quenching state has been induced by the 1.13eV light illumination, and the photocurrent has been recovered by light of 0.83eV and up, for T≥120K. These effects could be explained by the configuration coordinate model involving a main deep level EL2 and its metastable state EL2^* with large lattice relaxation. In this model, it has been found that the optical transition energies of EL2→EL2^* and EL2→C. B. are 1.13 and 0.83eV, respectively and the thermal activation energy of EL2^*→EL2 is about 0.2eV.
최춘태 한국언어과학회 2012 언어과학 Vol.19 No.1
The object of this paper is to investigate changing word-forms and phonological transformation of 凸, which is assumed to be a pictograph of male sexual organ, under the assumption that Archaic Chinese 凸 as a root word has the same meaning with that of Korean. Based on Archaic Chinese reconstituted by several scholars, this paper studied Archaic Chinese 凸 and any other letters in detail. We established reflecting phoneme which our ancestors had pronounced when the Archaic Chinese had been permeated into Archaic Korean. We ensured that they were divided into [아], [어], [오], [우], [으], and they followed the rules on phonological transformation of Korean phonetics regularly. When the letters were changing their forms, they obtained new meanings. we discovered the presence of these forms in Ancient Korean, Middle Korean, Present Korean, and even in dialects. With this, basic letter 凸 turned out to be a Korean language, and its basic meaning might be 'male sexual organ', and its derivation meaning is 'long and thin', 'high', 'coming out', 'project', like penis. Also, we could identify the process of phonological transformation rules of 凸. These ensure that 凸 has been linked to present Korean from Archaic Korean
崔春泰,李起芳 全北大學校 基礎科學硏究所 1980 基礎科學 Vol.3 No.1
The adsorption phenomena of the metal surface can be ascribed to the Van der Waals force. We estimated the Van der Waals interaction between inert gas and the crystal surface (100), (110), and(111) of the transition metal Ag and Cu employing the equation of Mahanty-Taylor. Calculating the adsorption energy, we assumed that as inert gas adsorbed on the metal surface has close-packed structure, the surface is non-activated unifrom, and there is no lateral interaction between adsorbed adspecies. It is found that the adsorption energy of an inert gas adsorbed on Cu almost equals to that of the same element on Ag surface, while the adsorption energy increases as the mass of inert gas element increases.
티타늄과 ITO 유리기판에 전착법으로 성장된 Hg1-xCdxTe 박막과 성장 조건이 결정구조 및 성분 조성비에 미치는 영향
최춘태 한국센서학회 2001 센서학회지 Vol.10 No.1
Hgl-XCdXTe(MCT) thin films were grown onto ITO glass and titanium plate by stationary cathodic electrodeposition in aqueous solution contained CdSOa, TeOz, and HgClz. During deposition two main fabrication parameters were taken into account : deposition potential and growth temperature. MCT films deposited by varying two parameters were studied by X-ray diffraction, electron probe micro analyser(EPMA) and scanning electron microscope measurements. It was shown by XRD and EPMA measurements that the structure of MCT films was zinc blende and the composition of MCT films can be controlled with the deposition potential.