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이창준,강신원,최시영 ( Chang Jun Lee,Shin Won Kang,Sie Young Choi ) 한국센서학회 1995 센서학회지 Vol.4 No.1
The absolute silicon pressure sensors are fabricated using SDB(silicon direct bonded) wafer. The fabricated pressure sensors consist of four bridge type piezoresistances and a diaphragm which plays a role of mechanic amplifier to supplying pressure. In order to make the diaphragm cavity in low vaccum condition, we anodically bonded Si diaphragm with Pyrex 7740 glass in 0.02mmHg, at 400℃. The sensitivity and offset voltage of the fabricated sensors were 30.4 ㎶/VmmHg and 30.6mV. respectively.
FABRICATION OF NASICON ELECTROLYTES
이창준,강신원,최시영 한국센서학회 1995 센서학회지 Vol.4 No.1
Conventional ball-milling technique was used to synthesize NASICON powders. The NASICON powders were made from three kinds of component powders : coarse(ZrO₂, Na₃PO₄, SiO₂), fine (ZrO₂, Na₃PO₄, SiO₂) and fine (ZrSiO₄, Na₃PO₄) powders. The fine component powders were easily reacted to form the desired product at 1100℃ or higher, whereas incomplete reaction due to the coarse component powders occurred even at 1170℃. The finer the grain size of the starting powders was, the higher the bulk density of NASICON electrolyte after sintering was observed. Almost single phase NASICON electrolytes with more than 95% of the theoretical density, 3.27g/㎤, could be fabricated by sintering for 40∼60 hours at temperatures between 1150 and 1170℃.