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조종회 ( Jong Hoi Cho ),임윤택 ( Yoon Taek Lim ),김우석 ( Woo Seok Kim ),윤영자 ( Young Ja Yun ),김신종 ( Shin Jong Kim ) 한국유화학회 2002 한국응용과학기술학회지 Vol.19 No.4
N/A A new process for polymeric gate insulator in field-effect transistors was proposed. Fourier transform infrared absorption spectra were measured in order to identify ODPA-ODA polyimide. Its breakdown field and electrical conductivity were measured. All-organic thin-film transistors with a stacked-inverted top-contact structure were fabricated to demonstrate that thermally evaporated polyimide films could be used as a gate insulator. As a result, the transistor performances with evaporated polyimide was similar with spin-coated polyimide. It seems that the mass-productive in-situ solution-free processes for all-organic thin-film transistors are possible by using the proposed method without vacuum breaking.