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      • KCI등재

        사파이어 웨이퍼 DMP에서 마찰력 모니터링을 통한 재료 제거 특성에 관한 연구

        조원석(Wonseok Jo),이상직(Sangjik Lee),김형재(Hyoungjae Kim),이태경(Taekyung Lee),이성범(Seongbeom Lee) 한국트라이볼로지학회 2016 한국트라이볼로지학회지 (Tribol. Lubr.) Vol.32 No.2

        Sapphire has a high hardness and strength and chemical stability as a superior material. It is used mainly as a material for a semiconductor as well as LED. Recently, the cover glass industry used by a sapphire is getting a lot of attention. The sapphire substrate is manufactured through ingot sawing, lapping, diamond mechanical polishing (DMP) and chemical mechanical polishing (CMP) process. DMP is an important process to ensure the surface quality of several nm for CMP process as well as to determine the final form accuracy of the substrate. In DMP process, the material removal is achieved by using the mechanical energy of the relative motion to each other in the state that the diamond slurry is disposed between the sapphire substrate and the polishing platen. The polishing platen is one of the most important factors that determine the material removal characteristics in DMP. Especially, it is known that the geometric characteristics of the polishing platen affects the material removal amount and its distribution. This paper investigated the material removal characteristics and the effects of the polishing platen groove in sapphire DMP. The experiments were preliminarily carried out to evaluate the sapphire material removal characteristics according to process parameters such as pressure, relative velocity and so on. In the experiment, the monitoring apparatus was applied to analyze process phenomena in accordance with the processing conditions. From the experimental results, the correlation was analyzed among process parameters, polishing phenomena and the material removal characteristics. The material removal equation based on phenomenological factors could be derived. And the experiment was followed to investigate the effects of platen groove on material removal characteristics.

      • KCI등재

        고정 입자 정반을 이용한 사파이어 기판의 연마 특성 연구

        이태경(Taekyung Lee),이상직(Sangjik Lee),조원석(Wonseok Jo),정해도(Haedo Jeong),김형재(Hyoungjae Kim) 한국트라이볼로지학회 2016 한국트라이볼로지학회지 (Tribol. Lubr.) Vol.32 No.2

        Diamond mechanical polishing (DMP) is a crucial process in a sapphire wafering process to improve flatness and achieve the target thickness by using free abrasives. In a DMP process, material removal rate (MRR) is a key factor to reduce process time and cost. Controlling mechanical parameters, such as velocity and pressure, can increase the MRR in a DMP process. However, there are limitations of using high velocities and pressures for achieving a high MRR owing to their side effects. In this paper, we present the lapping characteristics and improvement of MRR by using a fixed abrasive plate through an experimental study. The change in MRR as a function of velocity and pressure follows Preston"s equation. The surface roughness of a wafer decreases as the plate velocity and pressure increases. We observe a sharp decrease in MRR over the lapping time at a high velocity and pressure in the velocity and pressure test. An analysis of surface roughness (Rq and Rpk) indicates that wear of abrasives decreases the MRR sharply. In order to investigate the effect of abrasive wear on the MRR, we utilize a cutting fluid and a rough wafer. The cutting fluid delays the wear of abrasives resulting in improvement of MRR drop. The rough wafer maintains the MRR at a stable rate by self-dressing.

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