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정영순,임선영,Jung, Young-soon,Lim, Sun-young 중소기업융합학회 2021 융합정보논문지 Vol.11 No.4
본 연구는 졸업 학년 간호대학생의 핵심간호역량에 영향을 미치는 요인을 조사하기 위해 시도되었다. 연구대상자는 울산광역시 소재 C 대학에 재학 중인 간호학과 4학년 학생 178명이었고, 구조화된 설문지를 통해 자료를 수집하였다. 수집된 자료는 SPSS 25.0 프로그램을 이용하여 t-test, ANOVA, Pearson Correlation Coefficien과 Multiple stepwise regression으로 분석하였다. 연구결과 핵심간호역량에 영향을 미치는 요인을 확인한 모형은 유의한 것으로 나타났고(F=7.75, p<.001), 전공만족도(=0.44, p<.001), 비판적사고(=0.29, p=.003), 전문직관(=0.22, p=.009), 셀프리더십(=0.17, p<.001)이 영향요인으로 나타났으며. 핵심간호역량에 대한 이들 변인의 설명력은 23.4%이었다. 따라서 졸업 학년간호대학생의 핵심간호역량을 증진시키기 위한 프로그램 개발의 기초 자료로 활용할 수 있을 것이다. The purpose of this study is to investigate factors attecting the core nursing competence of senior nursing students.. The subjects who participated in this study were 178 students in the 4th year of nursing at one college in the Ulsan were surveyed using a structured questionnairs. Independent t-test, one way ANOVA and Pearson's corrlation coefficient, Stepwise regression were performed on the collected data using SPSS 25.0 program. Study finding revealed that major satisfaction(=0.44, p<.001), clitical thinking(=0.29, p=.003), nursing professionalism(=0.22, p=.009), and self-leadership(=0.17, p<.001) about core nursing competence were siginificant predictive variables(F=7.75, p<.001). This variables accounted for 23.4% of the variance in core nursing competency. Therefore, it is necessary to develp and apply program to improve core nursing competency in senoir nursing students.
코발트/니켈 복합실리사이드의 실리사이드온도에 따른 면저항과 미세구조 변화
정영순,정성희,송오성,Jung Young-soon,Cheong Seong-hwee,Song Oh-sung 한국재료학회 2004 한국재료학회지 Vol.14 No.6
The silicide layer used as a diffusion barrier in microelectronics is typically required to be below 50 nm-thick and, the same time, the silicides also need to have low contact resistance without agglomeration at high processing temperatures. We fabricated Si(100)/15 nm-Ni/15 nm-Co samples with a thermal evaporator, and annealed the samples for 40 seconds at temperatures ranging from $700^{\circ}C$ to $1100^{\circ}C$ using rapid thermal annealing. We investigated microstructural and compositional changes during annealing using transmission electron microscopy and auger electron spectroscopy. Sheet resistance of the annealed sample stack was measured with a four point probe. The sheet resistance measurements for our proposed Co/Ni composite silicide was below 8 $\Omega$/sq. even after annealing $1100^{\circ}C$, while conventional nickel-monosilicide showed abrupt phase transformation at $700^{\circ}C$. Microstructure and auger depth profiling showed that the silicides in our sample consisted of intermixed phases of $CoNiSi_{x}$ and NiSi. It was noticed that NiSi grew rapidly at the silicon interface with increasing annealing temperature without transforming into $NiSi_2$. Our results imply that Co/Ni composite silicide should have excellent high temperature stability even in post-silicidation processes.
나노두께 퍼말로이에서의 계면효과에 의한 자기적 물성 변화
정영순(Young soon Jung),송오성(Oh sung Song) 한국자기학회 2004 韓國磁氣學會誌 Vol.14 No.5
We prepared ultra thin film structure of Si(100)/SiO₂(200 ㎚)/Ta(5 ㎚)/Ni_(80)Fe_(20)(1~15 ㎚)/Ta(5 ㎚) using an inductively coupled plasma(ICP) helicon sputter. Magnetic properties and cross-sectional microstructures were investigated with a superconduction quantum interference device(SQUID) and a transmission electron microscope(TEM), respectively. We report that NiFe films of sub-3 ㎚ thickness show the Bbulk=0 and Bsurf=-3 × 10^(-7)(J/㎡). Moreover, Curie temperature may be lowered by decreasing thickness. Coercivity become larger as temperature decreased with 0.5 ㎚ - thick Ta/NiFe interface intermixing. Our result implies that effective magnetic properties of magnetoelastic anisotropy, saturation magnetization, and coercivity may change abruptly in nano-thick films. Thus we should consider those abrupt changes in designing nano-devices such as MRAM applications.
게이트를 상정한 니켈 코발트 복합실리사이드 박막의 물성연구
김상엽,정영순,송오성,Kim, Sang-Yeob,Jung, Young-Soon,Song, Oh-Sung 한국마이크로전자및패키징학회 2005 마이크로전자 및 패키징학회지 Vol.12 No.2
We fabricated Ni/Co(or Co/Ni) composite silicide layers on the non-patterned wafers from Ni(20 nm)/Co(20 nm)/poly-Si(70 nm) structure by rapid thermal annealing of $700{\~}1100^{\circ}C$ for 40 seconds. The sheet resistance, cross-sectional microstructure, and surface roughness were investigated by a four point probe, a field emission scanning electron microscope, and a scanning probe microscope, respectively. The sheet resistance increased abruptly while thickness decreased as silicidation temperature increased. We propose that the poly silicon inversion due to fast metal diffusion lead to decrease silicide thickness. Our results imply that we should consider the serious inversion and fast transformation in designing and process f3r the nano-height fully cobalt nickel composite silicide gates. 궁극적으로 게이트를 저저항 복합 실리사이드로 대체하는 가능성을 확인하기 위해 70 nm 두께의 폴리실리콘 위에 각 20nm의 Ni, Co를 열증착기로 적층순서를 달리하여 poly/Ni/Co, poly/Co/Ni구조를 만들었다. 쾌속열처리기를 이용하여 실리사이드화 열처리를 40초간 $700{\~}1100^{\circ}C$ 범위에서 실시하였다. 복합 실리사이드의 온도별 전기저항변화, 두께변화, 표면조도변화를 각각 사점전기저항측정기와 광발산주사전자현미경, 주사탐침현미경으로 확인하였다. 적층순서와 관계없이 폴리실리콘으로부터 제조된 복합실리사이드는 $800^{\circ}C$ 이상부터 급격한 고저항을 보이고, 두께도 급격히 얇아졌다. 두께의 감소는 기존의 단결정에서는 없던 현상으로 폴리실리콘의 두께가 한정된 경우 금속성분의 inversion 현상이 커서 폴리실리콘이 오히려 실리사이드 상부에 위치하여 제거되기 때문이라고 생각되었고 $1000^{\circ}C$ 이상에서는 실리사이드가 형성되지 못하였다. 이러한 결과는 나노급 두께의 게이트를 저저항 실리사이드로 만 들기 위해서는 inversion과 두께감소를 고려하여야 함을 의미하였다.