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수직전류 인가형 나노 스핀소자의 제조 및 자기저항 특성
전명길(M. G. Chun),이현정(H. J. Lee),정원용(W. Y. Jeung),김광윤(K. Y. Kim),김철기(C. G. Kim) 한국자기학회 2005 韓國磁氣學會誌 Vol.15 No.2
In order to make submicron cell for spin-injection device, lift-off method using Pt stencil and wet etching was chosen. This approach allows batch fabrication of stencil substrate with electron-beam lithography. It simplifies the process between magnetic film stack deposition and final device testing, thus enabling rapid turnaround in sample fabrication. Submicron junctions with size of 200 ㎚×300 ㎚ and 500 ㎚×500 ㎚ and pseudo spin valve structure of CoFe (30Å)/Cu (100Å)/CoFe (120Å) was deposited into the nanojunctions. MR ratio was 0.8 and 1.1%, respectively and spin transfer effect was confirmed with critical current of 7.65×10^7 A/㎠.