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대면적/단결정 Cu 박판을 이용한 대면적/단결정 hBN 합성
양혜원 ( Hye-won Yanga ),이창훈 ( Chang-hoon Leeb ),최병상 ( Byung-sang Choia ) 조선대학교 공학기술연구원 2022 공학기술논문지 Vol.15 No.1
A large area (20 mm × 20 mm) of single-crystalline monolayer hBN without any microscopic defects (grain boundaries, twins, etc.) was successfully synthesized by MOCVD at little above the atmospheric pressure (770 torrs). It was primarily possible due to utilizing the large area and single-crystalline Cu as a substrate prepared by a contactless heat treatment method to prevent any heat-related stress to the specimen. With carefully controlled and well-organized experiments, it was found that a slow increase in temperature is more critical than long-time heat treatment. Secondly, heat treatment at 1083℃ after a quick temperature reduction from 1084℃ to 1083℃ within 1 min is another key condition to obtain a smooth surface for the growth of single-crystalline Cu without any defects. Microstructural studies of synthesized hBN were carried out by X-ray diffraction, optical microscopy, scanning electron microscopy, and transmission electron microscopy.