http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
대기압 플라즈마를 이용한 P타입 태양전지 웨이퍼 도핑 연구
윤명수(Myoungsoo Yun),조태훈(Taehun Jo),박종인(Jongin Park),김상훈(Sanghun Kim),김인태(In Tae Kim),최은하(Eun Ha Choi),조광섭(Guangsup Cho),권기청(Gi-Chung Kwon) 한국태양광발전학회 2014 Current Photovoltaic Research Vol.2 No.3
Thermal doping method using furnace is generally used for solar-cell wafer doping. It takes a lot of time and high cost and use toxic gas. Generally selective emitter doping using laser, but laser is very high equipment and induce the wafer’s structure damage. In this study, we apply atmospheric pressure plasma for solar-cell wafer doping. We fabricated that the atmospheric pressure plasma jet injected Ar gas is inputted a low frequency (1 kHz ~ 100 kHz). We used shallow doping wafers existing PSG (Phosphorus Silicate Glass) on the shallow doping CZ P-type wafer (120 ohm/square). SIMS (Secondary Ion Mass Spectroscopy) are used for measuring wafer doping depth and concentration of phosphorus. We check that wafer’s surface is not changed after plasma doping and atmospheric pressure doping width is broaden by increase of plasma treatment time and current.