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엽하경,김세현 한국고분자학회 2021 한국고분자학회 학술대회 연구논문 초록집 Vol.46 No.2
Low voltage operating high-performance organic field-effect transistors (OFETs) are regarded as the building blocks of analog and digital integrated circuits for next generation electronics. To fulfil this, it must have high-k characteristics for increasing the capacitance values to make enough field effect charge, a hydrophobic surface that does not cause charge trapping, and a low leakage current property to guarantee the operating stability. This study demonstrates the new strategy to induce high-k characteristics in highly durable polysilsesquioxane based dielectric materials by permanent dipolar side chain reorientation under electric field and its applications to low voltage driving OFETs showing field-effect mobility as high as 30 cm2 V-1 s-1. In particular, the structural difference of polysilsesquioxane causes distinctiveness in polarization phenomenon, resulting in different hysteresis behaviors during device operation.
엽하경,김세현 한국고분자학회 2021 한국고분자학회 학술대회 연구논문 초록집 Vol.46 No.1
Solution-processed hydroxyl containing polymers like poly(4-vinylphenol) are widely utilized in organic filed-effect transistors (OFETs) due to their high dielectric constant (k) and excellent insulating properties by crosslinking through hydroxyl groups. However, hydroxyl functionalities can activate as trapsites, and crosslinking reactions of these materials decrease the k values. Accordingly, we try to maintain the merits while compensating for the disadvantages of these materials by synthesizing a new solution-processable copolymer containing hydroxyl and hydrophobic functionalities together. Also, we add fluorophenyl azide (FPA) based UV-assisted crosslinker to yield crosslinking.