스마트폰 시청 시 몸통 교정기 착용에 따른 목, 허리 굽힘-이완 비율, 관절가동범위, 압통, 착용감 변화

박진성,박두진,Park, Jin-Seong,Park, Du-Jin 대한고유수용성신경근촉진법학회 2021 PNF and Movement Vol.19 No.3

Purpose: This study was conducted to investigate changes in the cervical and lumbar flexion-relaxation ratio, range of motion, pressure pain threshold, and perceived comfort following the wearing of a trunk brace during smartphone watching. Methods: To calculate the number of subjects for this study, an analysis with G^*Power was performed at a statistical power of 0.8, an effect size of 0.5, and a significance level of 0.05, based on the results of a preliminary experiment on five subjects. In total, 27 adult men and women were recruited who had been informed of the study's purpose and process and had agreed to participate. All subjects watched content on a smartphone for 20 minutes in the same posture and conditions while wearing and not wearing a trunk brace, and then their cervical and lumbar flexion-relaxation ratio, range of motion, pressure pain threshold, and perceived comfort were measured. Results: Compared to the non-wearing of a trunk brace, the wearing of a trunk brace resulted in a statistically significant smaller decline in cervical extension and right-side cervical rotation (p<0.05). When the subjects wore a trunk brace, their right- and left-side cervical and right-side lumbar pressure pain statistically significantly improved when compared to not wearing a trunk brace (p<0.05). They also perceived a significantly lowered level of comfort 20 minutes after wearing a trunk brace compared to immediately after wearing it (p<0.05). Conclusion: The trunk brace was effective in reducing declines in right-side cervical rotation and the occurrence of left- and right-side cervical and right-side lumbar pressure pain. The findings indicate the need to improve the perceived comfort of trunk braces.

$\textrm{SiO}_2$를 첨가한 $\textrm{Cr}_2\textrm{O}_3$의 전기전도도

박진성,이은구,이우선,문종하,Park, Jin-Seong,Lee, Eun-Gu,Lee, U-Seon,Mun, Jong-Ha 한국재료학회 1997 한국재료학회지 Vol.7 No.7

SiO$_{2}$를 첨가한 Cr$_{2}$O$_{3}$의 전기전도도와 미세구조를 산소분압, 온도, 그리고 SiO$_{2}$첨가량에 따라 측정하였다. 입자직경은 1$\mu\textrm{m}$보다 작다. 순수한 Cr$_{2}$O$_{3}$의 전기전도도는 산소분압과 온도가 증가함에 따라 증가하였으며 110$0^{\circ}C$부터 진성 영역이 나타났다. Cr$_{2}$O$_{3}$의 전기전도도는 SiO$_{2}$첨가로 감소하지만, 산소분압에 따른 변화는 SiO$_{2}$첨가와 무관하다.

EMMI(Emission Microscope)와 FIB(Focused Ion Beam)를 이용한 Thin Oxide 불량분석

박진성,이은구,이현규,이우선,Park, Jin-Seong,Lee, Eun-Gu,Lee, Hyeon-Gyu,Lee, U-Seon 한국재료학회 1996 한국재료학회지 Vol.6 No.6

MOS 소자의 얇은산화막(thin oxide)불량을 화학적으로 식각하지 않고 불량부위를 광전자방사(photon emission)반응을 이용하여 위치를 확인하고, 이곳을 FIB로 절단하여 불량부위의 단면을 관찰했다. 20nm 두께의 SiO2불량은 셀(cell)영역의 위치에 따른 의존성은 없고, 불량은 저전계의 입자(particle)성 불량과 중간전계의 Si 기판 핏(pit)과 관련된 불량이 주였다. 고전계에서는 전형적인 SiO2 산화막의 절연파괴가 일어난 것이 관찰된다.

$\textrm{Li}_2\textrm{ZrO}_3$ 계를 이용한 $\textrm{CO}_2$ 가스 센서

박진성,김시욱,이은구,김재열,이현규,Park, Jin-Seong,Kim, Si-Uk,Lee, Eun-Gu,Kim, Jae-Yeol,Lee, Hyeon-Gyu 한국재료학회 1999 한국재료학회지 Vol.9 No.9

이산화탄소 기체센서를 Li$_2$ZrO$_2$계에서 온도와 $CO_2$농도의 함수로서 연구했다. Li$_2$ZrO$_3$를 열처리해서 합성했다. 시편은 직경 10mm, 두께 1mm의 벌크형과 알루미나 기판 위에 후막형으로 각각 제조했다. Li$_2$ZrO$_3$는 45$0^{\circ}C$에서 $650^{\circ}C$의 온도 범위에서 0.1%에서부터 100%까지 이산화탄소 농도 변화를 감지한다. 이산화탄소 감도는 측정온도와 연관성이 있다. Li$_2$ZrO$_3$는 45$0^{\circ}C$에서 $650^{\circ}C$의 온도 범위에서 $CO_2$와 반응해서 Li$_2$CO$_3$와 ZrO$_2$로 분해된다. $650^{\circ}C$ 이상에서 Li$_2$CO$_3$는 Li$_2$O와 $CO_2$로 재분해된다. Li$_2$ZrO$_3$센서의 재현성은 좋지 않았고, 동작온도는 55$0^{\circ}C$ 정도가 적당하였다. A carbon dioxide gas sensor was studied as a function of temperature and $CO_2$concentration in the Li$_2$ZrO$_3$ system. Lithium zirconate(Li$_2$ZrO$_3$) was synthesized by the heat-treatment of zirconia(ZrO$_2$)and Lithium carbonate(Li$_2$CO$_3$). The specimens were prepared both as bulk disk, 10mm in diameter and 1.0mm thickness, and thick films on an alumina substrate. Lithium zirconate readily responded to $CO_2$concentration from 0.1% to 100% in the range of 45$0^{\circ}C$ to $650^{\circ}C$. The sensitivity to $CO_2$ was dependent on the measuring temperature. Lithium zirconate(Li$_2$ZrO$_3$) decomposes into Li$_2$CO$_3$ and ZrO$_2$after the reaction with $CO_2$in the range of 45$0^{\circ}C$ to $650^{\circ}C$. Li$_2$CO$_3$ changes into Li$_2$O and $CO_2$ above $650^{\circ}C$. The material showed difficulty with reversibility and recovery. The optimum temperature for the highest sensitivity is around 55$0^{\circ}C$.

불로환(不老丸)을 투여한 흰쥐 뇌의 항산화효과에 관한 연구

박진성,고성규,이선동,Park Jin-Sung,Goh Seong-Kyu,Lee Sun-Dong 대한예방한의학회 2001 대한예방한의학회지 Vol.5 No.1

Objectives: Resently Oxidative stress of brain was proved the cause of Alzheimer and stroke sequel. It has important significance in prevention and treatment of cerebropathia that Bulnohwan used as formula of senescence delay have antioxidative effect. The purposes of this study is to investigate the effect of Bulnohwan on antioxidant defense systems such as thiobarbituric acid reactive substances(TBARS), Superoxide dismutase (SOD), Catalase (CAT), Glutathione peroxidase (GSH-PX), Glutathione S-transperase (GST), Glutathione (GSH) in rat brain. Method: Sprague - Dawley rats were divided into 3 groups; saline solution administered control group, Bulnohwan extract administered Experimental group I and Bulnohwan adminisrtrated, 40% dietary restricted Experimental group II. Animals were sacrificed at 12 weeks after treatment TBARS, SOD, CAT, GSH-PX, GST and GSH were measured in mts brain. Results: weight of brain was no stastical significance.(p>0.05) TBARS contents were significant decrease in Experimental group I, II. (p<0.001) SOD activity was stastical significance in Experimental group II, whereas it was no stastical significance Experimental group II.(p<0.0001) Catalase activites were significant increase in . (p<0.00l) Glutathione Peroxidase activites were significant increase in Experimental group I,II. (p<0.000l) Glutathione S-transferase activites were significant increase in Experimental group I, II. (p<0.000) However there were no statistical significance each other. Glutathione contents were significant increase in Experimental group I, II. (p<0.00l) Conclusions: According to the above results, it is considered that Bulohwan has antioxidants effect in rat brain. When Bulohwan goes with diet restriction, there has more Antioxidants effect in rat brain. but this study was perfored retrospectively. So more prospective studies about mutual relation of drugs are needed

$N_2$O 분위기에서 RTP로 제조한 실리콘 산화막의 산화 반응

박진성,이우성,심태언,Park, Jin-Seong,Lee, U-Seong,Sim, Tae-Eon 한국재료학회 1993 한국재료학회지 Vol.3 No.1

실리콘 산화막을 $N_2$O 분위기에서 RTP로 제조하여 그 성장 기구를 고찰 했다. 산화막과 기판 실리콘 계면 사이에 질소성분이 포함된 oxynitride층이 존재한다. $N_2$O 기체를 이용한 산화막 성장은 삼화제 확산에 의해 성장이 지배되는 포물선 성장론을 따르고 산화제 확산 억제작용은 실리콘 산화막과 실리콘 기판사이에 존재하는 oxynitride막에서 일어난다. 확산이 산화막 성장을 결정하는 구간에서 포물선 성장율 상수 B의 활성화 에너지는 약 1.5 eV이고 산화막 두께 증가에 따라 증가한다. Abstract Oxidation kinetics of silicon oxide films formed by rapid thermal oxidizing Si substrate in $N_2$O ambient studied. The data on $N_2$0 oxidation shows that the interfacial nitrogen-rich layers results in oxide growth in the parabolic regime by impeding oxidant diffusion to the Si$O_2$-Si interface even for ultrathin oxides. The activation energy of parablic rate constant, B, is about 1.5 eV, and the energy increses with oxide thickness.

RTP로 $N_2$O 분위기에서 제조한 Oxynitride Gate 절연체의 물질적 전기적 특성

박진성,이우성,심태언,이종길,Park, Jin-Seong,Lee, Woo-Sung,Shim, Tea-Earn,Lee, Jong-Gil 한국재료학회 1992 한국재료학회지 Vol.2 No.4

Si(100) 웨이퍼를 사용하여 RTP 장비에서 $O_2$와 $N_2$O 분위기에서 8nm의 oxynitride를 제조 하였다. 기존의 로(furnace) 열산화막과 비교해서 oxynitride는 I-V, TDDB 특성이 우수하였고, flat-band voltage shift도 적었으며 $BF_2이온$ 주입에 의한 붕소 투과 억제 특성도 우수하다. 유전상수는 oxynitride가 열산화막에 비해서 크다. Oxynitride는 순수한 Si$O_2$유사하게 V 〉${\varphi}_0$ 구간에서 Fowler-Nordheim 터널링 특성을 나타낸다. SIMS, AES, 그리고 XPS 분석 결과 질소 pile-up이 Si$O_2$/Si 계면에서 나타나고, 이것은 oxynitride 산화막 특성 향상과 깊은 관련이 있다. Ultrathin(8nm) oxynitride (SiOxNy) film have been formed on Si(100) by rapid thermal processing(RTP) in $O_2$and $N_2$O as reactants. Compared with conventional furnace $O_2$ oxide, the oxynitride dielectrics shows better characteristics of I-V and TDDB, and less flat-band voltage shift. The oxynitride has a behavior of Fowler-Nordheim tunneling in the region of V 〉${\varphi}_0$ simialr to pure Si$O_2$oxide. The relative dielectric constant of oxynitride is higher than that of conventional pure oxide. Excellent diffusion harrier property to dopant(B$F_2$) is also observed. Nitrogen depth profiles by SIMS, AES, and XPS show nitrogen pile - up at Si$O_2$/Si interface, which can explain the improved properties of oxynitride dielectrics.

고강도 구조용 철강소재의 대입열 용접 시 열영향부의 조직 미세화 및 기계적 특성 향상에 미치는 TiN 및 B의 효과

박진성,황중기,조재영,한일욱,이만재,김성진,Park, Jin-seong,Hwang, Joong-Ki,Cho, Jae Young,Han, Il Wook,Lee, Man Jae,Kim, Sung Jin 한국재료학회 2019 한국재료학회지 Vol.29 No.2

In the current steel structures of high-rise buildings, high heat input welding techniques are used to improve productivity in the construction industry. Under the high heat input welding, however, the microstructures of the weld metal (WM) and heat-affected zone (HAZ) coarsen, resulting in the deterioration of impact toughness. This study focuses mainly on the effects of fine TiN precipitates dispersed in steel plates and B addition in welding materials on grain refinement of the HAZ microstructure under submerged arc welding (SAW) with a high heat input of 200 kJ/cm. The study reveals that, different from that in conventional steel, the ${\gamma}$ grain coarsening is notably retarded in the coarse grain HAZ (CGHAZ) of a newly developed steel with TiN precipitates below 70 nm in size even under the high heat input welding, and the refinement of HAZ microstructure is confirmed to have improved impact toughness. Furthermore, energy dispersive spectroscopy (EDS) and secondary-ion mass spectrometry (SIMS) analyses demonstrate that B is was identified at the interface of TiN in CGHAZ. It is likely that B atoms in the WM are diffused to CGHAZ and are segregated at the outer part of undissolved TiN, which contributes partly to a further grain refinement, and consequently, improved mechanical properties are achieved.

환절기 자돈사고 예방을 위한 사양관리 포인트

박진성,Park, Jin-Seong 대한양돈협회 2006 養豚 Vol.28 No.10

광산업체 관련 금융기관 초청 Seminar 스케치

박진성,Park, Jin-Seong 한국광산업진흥회 2003 광산업정보 Vol.14 No.-