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박성근,백민수,배승춘,권성열,김광태,김기완,Park, Seong-Geun,Baek, Min-Su,Bae, Seung-Chun,Gwon, Seong-Yeol,Kim, Gwang-Tae,Kim, Gi-Wan Materials Research Society of Korea 1999 한국재료학회지 Vol.9 No.2
LiNbO$_3$films were prepared by an rf-magnetron sputtering technique using sintered target containing potassium. The potassium was included to help to fabricate stoichiometric LiNbO$_3$film. Structural and electrical properties of thin films was investigated as a function of deposition condition. Optimum sputtering conditions were rf power of 100W, working pressure of 1m Torr and substrate temperature of 58$0^{\circ}C$. The thin film was grown to (012) preferred orientation. The dielectric constant of the thin film LiNbo$_3$ fabricated under optimum condition was 55 at 1MHz. Average grain size is about 200$\AA$ and roughness of the film is small enough to apply to optic devices.