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난각으로부터 합성된 초미립 CaO 분말을 이용한 C3S, C2S, C3A 분말 합성 및 혼합 경화체에 미치는 C3A 함량의 영향
공헌,권기범,박상진,노효섭,이상진,Kong, Heon,Kwon, Ki-Beom,Park, Sang-Jin,Noh, Whyo-Sub,Lee, Sang-Jin 한국분말야금학회 2019 한국분말재료학회지 (KPMI) Vol.26 No.6
In this work, ultra-fine calcium oxide (CaO) powder derived from eggshells is used as the starting material to synthesize mineral trioxide aggregate (MTA). The prepared CaO powder is confirmed to have an average particle size of 500 nm. MTAs are synthesized with three types of fine CaO-based powders, namely, tricalcium silicate (C3S), dicalcium silicate (C2S), and tricalcium aluminate (C3A). The synthesis behavior of C3S, C2S and C3A with ultra-fine CaO powder and the effects of C<sub>3</sub>A content and curing time on the properties of MTA are investigated. The characteristics of the synthesized MTA powders are examined by X-ray diffraction (XRD), field emission-scanning electron microscope (FE-SEM), and a universal testing machine (UTM). The microstructure and compressive strength characteristics of the synthesized MTA powders are strongly dependent on the C3A wt.% and curing time. Furthermore, MTA with 5 wt.% C3A is found to increase the compressive strength and shorten the curing time.
이운영 ( Woon Voung Lee ),노효섭 ( Whyo Sub Noh ),김광호 ( Guang Hu Jin ) 조선대학교 공학기술연구원 2011 공학기술논문지 Vol.4 No.1
Effects of design factors of oxygen sensor package, such as heal resistance, lead wires and Ni pins. In this study power consumption and operating temperature of oxygen sensor were investigated. It is impossible to investigate directly the correlation between design factors and temperature characteristics of sensor package because of high operating temperature above 500℃. So, computative simulation method based on Newton`s iterative method was used in this study. Matlab 2007B was used for computative calculation. The simulation were verified by the results of power consumption using power supply. Sensor device were heated upto 700°C at a applied voltage of 8V when substrate size was 2 x 3 mm and heater resistance was 14.5Ω. Temperature of sensor devices was 2.5℃ when environment temperature was varied by 10℃. Also, applied voltage was varied for 7℃ by 0.1 V and heat resistance was varied for 10°C by 0.5 Ω.