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표면탄성파 소자 응용을 위한 $LiTaO_3$ 단결정 성장
정대식,노용래,박병학,김유성,Chung, D.S.,Roh, Y.R.,Park, B.H.,Kim, Y.S. 한국결정성장학회 1994 한국결정성장학회지 Vol.4 No.2
표면탄성파 소자응요을 위하여 완전용융조성, 48.65 mole % $Li_2O에서 LiTaO_3(LT)$ 단결정(Y, X-axis)을 육성하였다. 육성된 $LiTaO_3(LT)$ 단결정의 SAW 소자성능을 확인하기 위하여 photolithography를 거쳐 기본적인 SAW filter를 제작하였다. Yamaju LT Y-cut 단결정 기판과 본 연구에서 제작된 RIST LT Y-cut 단결정 기판에서의 SAW특성결과를 비교하여 성능을 결정하였다. Yamaju LT 기판에서보다 본 연구에서 육성된 LT 단결정 기판에서 우수한 SAW 성능을 보였다. $LiTaO_3 (LT)$ single crystals (Y, X-axis) were grown from the congruent composition, 48.65 mole %, $Li_2O$ for SAW (Surface Acoustic Wave) applications. Basic SAW filters were fabricated on the RIST prepared LT wafers (Y-cut) using phtolithography. SAW filter performance was evaluated. The results were compared of the SAW characteristics between RIST prepared LT wafer (Y-cut) and commercial Yamaju wafer (Y-cut). The SAW filter prepared on the RIST grown LT wafer was shown better SAW performances than that of Yamaju wafer.
전자빔 열처리에 따른 TiO2 박막의 수소가스 검출 특성 연구
허성보 ( S. B. Heo ),이학민 ( H. M. Lee ),정철우 ( C. W. Jung ),김선광 ( S. K. Kim ),이영진 ( Y. J. Lee ),김유성 ( Y. S. Kim ),유용주 ( Y. Z. You ),김대일 ( D. Kim ) 한국열처리공학회 2011 熱處理工學會誌 Vol.24 No.1
TiO2 films were deposited on a glass substrate with RF magnetron sputtering and then surface of TiO2 films were electron beam irradiated in a vacuum condition to investigate the effect of electron bombardment on the thin film crystallization, surface roughness and gas sensitivity for hydrogen. TiO2 films that electron beam irradiated at 450eV were amorphous phase, while the films irradiated at 900eV show the anatase (101) diffraction peak in XRD pattern. AFM measurements show that the roughness is depend on the electron irradiation energy. As increase the hydrogen gas concentration and operation temperature, the gas sensitivity of TiO2 and TiO2/ZnO films is increased proportionally and TiO2 films that electron beam irradiated at 900eV show the higher sensitivity than the films were irradiated at 450eV. From the XRD pattern and AFM observation, it is supposed that the crystallization and rough surface promote the hydrogen gas sensitivity of TiO2 films. (Received November 5, 2010; Revised December 13, 2010; Accepted January 3, 2011)