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(111) CdTe 기판의 이탈방위각이 LPE 법으로 성장시킨 Hg0.7Cd0.3Te 박막의 표면 형상에 미치는 영향
김재묵,서상희,임성욱,최인훈,곽로정 대한금속재료학회(대한금속학회) 1991 대한금속·재료학회지 Vol.29 No.1
Hg_(0.7)Cd_(0.3)Te epilayers were grown by a silder-type LPE(liquid phase epitaxy) technique using Te-rich growth solution. CdTe substrates of (111)Cd orientation with various degrees of misorientation were prepared by vertical Bridgman crystal growth and subsequent chemo-mechanical polishing processes. Epi-layers, which were grown using a substrate with 1^0 misoriented toward four different directions, showed a typical terrace morphology with terrace fronts perpendicular to the misorientation directions. As the misoriented angle increases, the terrace width decreases, while the terrace height increases. With the misorientation larger than 2^0, the terrace structure begins to disappear transforming into a wave-like surface. The initial stage of the epi-layer growth is thought to be governed by the so-called step bunching process. Dislocations begin to play a major role in the growth process when the terrace becomes as wide as 10 to 30㎛. Epi-layers were examined by Nomarski differential interference contrast optical microscope and stylus