CW Laser Annealing 과정중 SOS 상의 시간적 온도변화 측정에 관한 연구

고년규,윤희중,유동선,최원국,문경순 연세대학교 대학원 1987 延世論叢 Vol.23 No.1

The purpose of this experiment is to demonstrate the new method of TSRTM during CW Ar laser annealing using a He-Ne laser probe beam. Optical interference phenomena by a small changes of refractive index of Si, which is induced by the temperature change during short time laser annealing on the Si wafer surface, was used. The samples, SOS(Silicon on Sapphire), used in this work were epi. <100> Si grown on a <1012> insulator sapphire substrate with 2.0μm thickness. From the experimental temperature dependent equation of the refraction of index of Si with respect to the probe beam(λ=6328 Å) in furnace experiment, n(T)=3.98+7×10-4T (℃), the temperature on the destructtve or constructive interference was calculated. Incident Ar laser beam whose power ranges from 1.8W to 2.8W was irradiated and the effect of temperature rise of Si wafer on the elliptical spot whose major and minor axis is 200μm, 15μm respectively is investigated by the He-Ne laser probe beam which is focused 30μm. The annealing time ranges from 8 msec~250 msec to 500 msec~20 sec was adopted to estimate that the first constructive interference is occurred at least total irradiated power density 5.46×102Jㆍsec/cm2, and it is inferred that more than 180msec is needed for the first constructive interference when the total incident energy is 2.8 W. For the longtime annealing, about more than 1 sec, the interference pattern was coincided with the result produced by the furnace experiment. It is investigated from the space-resolved temperature gradient that the irradiated laser beam was focused in center.

Li Ion Implanation에 의한 Silicon Solar Cell

고년규 연세대학교 대학원 1971 延世論叢 Vol.8 No.1

Using a 40 kV accelerator, p-type Si wafers were doped with Li ions to form p-n junctions and the photovoltaic effect studied for various wavelengths. Also for each diode an I-V curve was obtained and its relation to the photovoltaic effect studied. In addition the optical characteristics of the diodes making them applicable as solar cells are reported.

Ring型 Electron Gun의 試作과 그의 特性

高年奎 연세대학교 대학원 1972 延世論叢 Vol.9 No.1

In preparation for the construction of a ring type self-accelerating electron gun for use with a floating zone melting apparatus, the electron beam emission, electrostatic deflection and focusing characteristics of this type of gun were studied and it was determined how the current density distribution of the focused electron beam varied with the acceleration voltage. And the research leas also carried out on the electric field distribution between the cathode and anode.

여기상태의 원자를 투과한 Li 이온의 전하변환 단면적에 관한 연구

李鐵柱,高年奎,邊大鉉,黃正男 연세대학교 자연과학연구소 1979 學術論文集 Vol.3 No.-

본 실험에서는 10~60 keV의 에너지 범위에서 기저상태의 He, Ar 및 N_2와 여기 샹태의 He, Ar 및 N_2를 투과한 Li^+이온의 전자포획단면적 σ10와 σ10^*을 측정하였다. 기저상태의 표적물질에 대한 전하변환 단면적은 다른 사람들의 실험 결과 및 개량된 Rapp과 Francis의 이론값과 일치 하였다. 표적원자의 여기상태는 전자 충격법을 사용하여 생성시켰으며, 이때의 여기 단면적은 느린 전자검출법으로 측정하였다. 여기상태의 표적원자에 대한 전하변환 단면적 σ10^*는 기저상태에 대한 σ 보다, He에 대해서는 에너지가 적은 영역에서는 100배, 에너지가 많은 영역에서는 10배나 컸으며 Ar과 N^2에서는 30배에서 5배 정도 컸다. The electron capture cross sections σ10 and σ10^* of Li^+ in ground and metastable state He, Ar, and N_2 have been measured by the growth rate method in the energy range from 10 to 60keV. The cross section for ground state He, Ar and N_2 are in good agreement with other experimental results and with theoretical results from the Rapp and Franchis theory obtained by using an effective ionization potential and a modified impact parameter. The metastable stases of the target atoms were produced by the electron impact method and the excitation cross sections of He(2^3S_1), Ar(3^3P) and N_2 (A^3∑^+_u) were meaured by the trapped electron method. The σ10^* charge transfer cross sections for the metastable state are larger than the σ10 cross section for the ground state by a factor ranging from 10^2 in the lower energy region to 10 in the higher energy region in He, and from 30 to 5 in both Ar and N_2.

금속증기를 투과한 이온의 전하변환 현상에 관한 연구

李鐵柱,高年奎,黃正男 연세대학교 대학원 1977 延世論叢 Vol.14 No.2

Li+ was accelerated up to 60 keV using a C-W type accelerator and allowed to penetrate metallic vapour (Li and Cd). Then the symmetric resonant electron capture cross sections and the antisymmetric electron capture cross sections were calculated from the results and compared with Rapp and Francis's theoretical results. In Li+ → Cd process, σ10 is 1×10-16 cm2 at 30 keV, Which is good agreement with adiabatic criterion. In Li+ → Li process, The symmetric resonant electron capture cross sections tend to decrease with increasing energy.

He, Ar 및 N_2를 투과한 Li^+이온의 전자포획 단면적에 관한연구

李鐵柱,高年奎,黃正男,秦源培 연세대학교 자연과학연구소 1978 學術論文集 Vol.2 No.-

본실험실에서 제작한 60 keV C-W형 선형가속기를 사용하여 Li^+이온이 N_2,Ar, He을 투과한후의 단일전자 포획 단면적을 생성율 측정법을 사용하여 10~60 keV 구간에서 측정하였다. Li^++He, Li^++N_2에 대한 σ_10는 에너지가 증가함에 따라 단조증가 하였으며 Li^++Ar에 대한 σ_10는 40 keV에서 최대 단면적 2.8×10^-16㎠를 나타냈으며 이값은 단열적기준치와 일치하는 것이다. 본 연구의 σ_10는 다른 사람들의 실험값과 매우 잘 일치 하였으며 Rapp와 Francis의 이론값과도 잘일치하였다. The electron capture cross sections σ_10 of Li^+ in He, Ar and N_2 were measured by growth rate method in the energy range from 10 to 60 keV. The Li^+ ion were accelerated by 60 keV C-W type accelerator. σ_10 for Li^++He and Li^++N_2 increased as increasing ion energy, but for Li^++Ar showed maximum value of 2.8×10^-16㎠ at 40 keV, that is in agreement with adiabatic criterion. σ_10 in this study were in excellent agreement with other experimental results and theoretical values suing mean value of target and incident atom’s ionization potential.

이온주입법에 의한 Silicon 방사선검출기 제작

김도경,고년규,이철주 연세대학교 대학원 1971 延世論叢 Vol.8 No.1

Using a 40 kev accelerator, p-type Si wafers were doped with Li ion to form P-I-N junction and the Radiation Detector studied for Cs-137 γ-ray source. Also for Detector a thermal characteristics was studied. In addition, the thermal characteristics of the diode for Thermal Detector are reported.

新回轉式 單結晶生長法으로 製造된 CdTe의 電磁氣的 特性

李鐵柱,高年奎 연세대학교 대학원 1971 延世論叢 Vol.8 No.1

At present Ge(Li) and Si(Li) semiconductor detector materials produced by conventional fabricating methods have high resolution and detection efficiency for nuclear radiation, however, hale serious defects due to the temperature sensitivity. Therefore, the needs for semiconductor materials for gamma ray detection at the ambient or above is increasingly widespread. For this solution, II-V compound semiconductor CdTe is the best material except the high trapping centers. In order to reduce them, new rotational single crystal growing furnas was deviced and fabricated CdTe single crystal. The concentration of trapping centers was reduced to NT= 1014/cm3 compared with 1015∼1016/cm3. In this experiment, the rotational speed made constant speed of 800 rpm. On the other hand, the rotational speed of growing was changed to the three speed of 800, 650 and 350 rpm. Then the slower the rotaitonal speed, the larger mobility and the mean free drift time-The mobility-trapping time product improved to 1.0×10-4cm/V.

Ion Implantation과 Ion Plating법으로 제작한 반도체 태양전지 및 방사선 검출기의 물리적 성질과 그응용에 관한 연구(Ⅱ)

조철우,황정남,고년규,정원모,이철주,우정주 연세대학교 자연과학연구소 1983 學術論文集 Vol.11 No.-

p형 Si에 Li^+이온을 가속기를 사용하여 이온 주입시킨후 열자극 전류(TSC)를 측정하여 양공 에너지 준위, 양공 방출율, 양공 포획 단면적 등을 결정하였다. 161K에서 하나의 TSC peak가 형성되었으며 이 peak가 hole trap임을 확인하였고, 이 peak에 대한 E_p, B_p 및 σ_p는 각각 0.264±0.028 eV, 4.11×10^4_s^-1K^-2 및 2.32×10^-17cm^2이었다. 이 trap은 divacancy나 [Li_I+O+V] defect에 의한 것으로 추측하였다. Hole trap energy level, hole emission rate, hole capture cross section and trap charge state are investigated from TSC curves of p-type Si implanted with low energy (<20 keV) Li^+ ions from a low energy accelerator which was designed and constructed in this research. When a reverse bias voltage of 20 V is applied during cooling and light excitation, the TSC curve shows a peak at 161K and the value of δ/ω is 0.57, which means that the TSC is due to a 2nd kinetic order mechanism. The values of the parameters E_p, B_p, and σ_p are 0.264±0.028 eV, 4.11 × 10^4_s^-1K^-2 and 2.32 × 10^-17㎠, respectively. This hole trap may be due to the divacancy or the [Li_I + O + V] defect.

Einzel 렌즈안의 전위분포와 이온 궤적에 관한 Computer Simulation

우정주,황정남,고년규,정원모,이철주 연세대학교 자연과학연구소 1982 學術論文集 Vol.9 No.-

Einzel lens 내부의 전위분포와 대전입자의 궤적에 대하여 computer simulation 시킨 결과, 3 tube Einzel lens의 초점거리 f/R는 중앙 전극의 길이가 일정할 때 S/R가 증가함에 따라 감소하였고, S/R가 일정할 경우에는 L/R이 증가함에 따라 f/R가 감소하였으며, spherical aberration 계수와 chromatic aberration 계수는 중앙전극의 길이가 증가함에 따라 감소하였다. Computer simulation for the charged particle trajectory and potential distribution in Einzel lens is described. An adequate matrix is employed to simulate the potential in rectangular or axisymmetric configuration, and trajectory computations are employed to simulate charged particles. The focal length f/R of 3-tube Einzel lens is decreased as increasing S/R at constant length of central electrode, and also f/R is decreased as increasing L/R at constant value of S/R. The spherical and chromatic aberration coefficients are decreased as increasing the length of central electrode.