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Zn_60Cd_40Te 단결성 반도체의 전기광학적 특성
姜鉉植,金豊久 全北大學校 基礎科學硏究所 1982 基礎科學 Vol.5 No.1
Zn_60Cd_40Te single crystal were grown by Bridgemann method, and lattice constant (a_o=6.243A˚) was determined from X-ray diffraction. Temperature dependence of the band gap and defect level of the interband have been found for measurement of transmission, photoconductivity, and dark current at 30^˚K ∼ 300^˚K . The energy band gap was 1.916 eV and temperature coefficient was -5.2 × 10 exp (-4) eV/˚K. Also, acceptor center of V_cd^-2 has been found at 0.305 eV above valence band.
Zn_80.1Cd_19.9Te 단결정 반도체의 전기-광학적 성질
姜鉉植,金豊久 全北大學校 師範大學 1982 사대논문집 Vol.8 No.-
Zn_80.1 Cd_19.9 Te single crystal were grown by Bridgmann method, and lattice constant(a_o=6.160A。) was determined from X-ray diffraction. Temperature dependence of the band gap and defect level of the interband have been found for mearurement of transmission, photoconductivity, and dark current at 30°K∼300°K. The energy band gap was 2.157eV and temperature coefficient was -5.3x10^-4ev/°K. Also, a defect level has been found at 0.176 eV.