Morin Protects Acute Liver Damage by Carbon Tetrachloride ($CCl_4$) in Rat

Lee, Hee-Seung,Jung, Kyung-Hee,Hong, Sang-Won,Park, In-Sub,Lee, Chong-Mu,Han, Hyo-Kyung,Lee, Don-Haeng,Hong, Soon-Sun 대한약학회 2008 Archives of Pharmacal Research Vol.31 No.9

The purpose of this study was to investigate possible beneficial effects of morin on $CCl_4$-induced acute hepatotoxicity in rats. Rats received a single dose of $CCl_4$ ($150{\mu}L$/100 g 1:1 in corn oil). Morin treatment (20 mg/kg) was given at 48, 24, and 2 h before $CCl_4$ administration. $CCl_4$ challenge elevated serum alanine transaminase (ALT), aspartate transaminase (AST), and alkaline phosphatase (ALP) levels, but these effects were prevented by the pretreatment of rats with morin. To identify the mechanism of protective activity of morin in $CCl_4$-induced hepatotoxicity in rats, we investigated expressions of tumor necrosis factor alpha (TNF-$\alpha$), interleukin-$1{\beta}$ (IL-$1{\beta}$), interleukin-6 (IL-6), and inducible nitric oxide (iNOS). The expressions of TNF-$\alpha$, IL-$1{\beta}$, IL-6, and iNOS were increased by $CCl_4$ treatment and increased expressions of those were decreased by morin. These findings suggest that morin prevents acute liver damage by inhibiting the production of TNF-$\alpha$, IL-$1{\beta}$, IL-6, and iNOS.

ECR plasma로 전처리된 Cu seed층 위에 전해도금 된 Cu 막에 대한 Annealing의 효과

이한승,권덕렬,박현아,이종무,Lee, Han-seung,Kwon, Duk-ryel,Park, Hyun-ah,Lee, Chong-mu 한국재료학회 2003 한국재료학회지 Vol.13 No.3

Thin copper films were grown by electrodeposition on copper seed layers which were grown by sputtering of an ultra-pure copper target on tantalum nitride-coated silicon wafers and subsequently, cleaned in ECR plasma. The copper films were then subjected to ⅰ) vacuum annealing, ⅱ) rapid thermal annealing (RTA) and ⅲ) rapid thermal nitriding (RTN) at various temperatures over different periods of time. XRD, SEM, AFM and resistivity measurements were done to ascertain the optimum heat treatment condition for obtaining film with minimum resistivity, predominantly (111)-oriented and smoother surface morphology. The as-deposited film has a resistivity of ∼6.3 $\mu$$\Omega$-cm and a relatively small intensity ratio of (111) and (200) peaks. With heat treatment, the resistivity decreases and the (111) peak becomes dominant, along with improved smoothness of the copper film. The optimum condition (with a resistivity of 1.98 $\mu$$\Omega$-cm) is suggested as the rapid thermal nitriding at 400oC for 120 sec.

냉간압연된 Fe-Al-N 合金에서의 再結晶 및 結晶粒 構造

李鐘武 嶺南大學校 工業技術硏究所 1978 연구보고 Vol.6 No.1

A study was made of effects of several factors on the recrystallization behaviors of Fe-Al-N alloys. Aluminum nitride precipitates in the early stage of recrystallization were detected by either extraction replica technique or the direct observation of thin foils of transmission electron microscopy. The results obtained are summarized as follows; (1) In Fe-Al-N alloys, recrystallization process was accelerated with the increase of aluminum content, cooling rate subsequent to the solution treatment, and cold reduction percent, for the above mentioned factors were thought to promote the precipitation of aluminum nitride. (2) The finer the grains after annealing treatment were, the longer the grains were. (3) Electron microscopy revealed that it was aluminum nitride precipitate particle that had important effects upon the recrystallization behaviors in Fe-Al-N alloys. And it also revealed the following fact; The aluminum nitride particle had the face centered cubic structure in the early stage of the precipitation and came to be the stable phase of the hexagonal close packed structure with the increase of annealing temperature or time.

Super-Impose 기법을 이용한 개인식별 법 : 지존파 살인사건 감정사례 A case report

이영석,강현무,김달원,김종열 內務部 國立科學搜査硏究所 1996 國立 科學 搜査 硏究所 年報 Vol.28 No.-

1100 및 6061 알루미늄 합금에 있어서 Strain Rate가 流動應力에 미치는 영향

鄭潾相,李鍾武,芮吉村 慶北大學校 産業開發硏究所 1976 硏究報告 Vol.4 No.-

The effect of the strain rate on the flow stress and the strain rate sensitivity were investigated for 1100 and 6061 aluminum alloy heat-treated in the different ways. The flow stress increment increased with the increase of the strain rate over the range of 0.01∼1.0 min_-1 in the furnace cooled 1100 aluminum specimens, while it was aproximately constant in the water quenched ones. When the ratio of the strain variation increased up to a hundred times, the value of the strain rate sensitivity decreased for the water quenched 1100 aluminum specimens. And the effect of the strain rate was negligible in either case of the furnace cooled 1100 aluminum and 6061­T_6 heat treated alloy. The load carring ability rised along with the extent of decrease in the strain rate over the range of 0.01∼1.0 min^-1 for the water quenched 6061 aluminum alloy.

EFFECTS OF PLASMA TREATMENTS ON THE EROSION OF TEIS-BPSG FILMS BY CHEMICAL ETCHANTS

Lee, Chong-Mu,Lee, Su-Cheon 한국재료학회 1995 Fabrication and Characterization of Advanced Mater Vol.2 No.e3

One of the most crucial problems in defining contact holes in the BPSG film is that the photoresist around the contact hole is partially removed by the HF solution's attacking the BPSG film under the photoresist along the photoresist-BPSG interface. In this study effects of plasma treatments on inhibiting the erosion of the BPSG film by the attack of the HF solution were investigated. The plasma treatment was found to be effective for TEOS-BPSG but ineffective for $SiH_4-BPSG$. The relative effects of various plasma treatments are as follows : $N_2O$ plasma > $O_2$ plasma> $N_2$ plasma > $NH_3$ plasma. From the resutls of the electron spectrometry by chemical analysis (ESCA) and the secondary ion mass spectrometry (SIMS) analysis we can draw the following two conclusions : 1) Si-OH bonds are changed into Si-O bonds in the BPSG film by the $N_2O$ or $O_2$ plasma treatment, while Si-OH bonds are changed into Si-N bonds by the $NH_3$ or $N_2$ plasma treatment. 2) The formaton of the Si-O or Si-N bonds in the BPSG film increases the hardness and the integrity of the BPSG film and therby enhances the resistance against the attack of the HF solution.

A Comparison of the Surface Properties of DLC and Nanocrystalline Diamond

Lee, Chong Mu,Kim, Kyung Ha Trans Tech Publications, Ltd. 2007 Key Engineering Materials Vol.336 No.-

<P>Diamond-like carbon (DLC) films have been deposited by radio frequency plasma enhanced chemical vapour deposition (rf-PECVD) with different Ar-CH4 mixtures. Nanocrystalline diamond films have been deposited by microwave plasma-enhanced chemical vapour deposition (MPCVD), using Ar-H2-CH4 mixtures. X-ray photoelectron spectroscopy (XPS) and nanotribological investigation (by scanning force microscopy) have been used to compare the mechanical properties and structures of these films. Highly orientated and non-orientated microcrystalline diamond films and MPCVD-produced amorphous carbon have also been studied by way of comparison. The diamond films exhibit a linear relationship between roughness and the coefficient of friction. The DLC and amorphous carbon have higher friction coefficients than the best performing diamond film, but may more easily be deposited as smooth coating. Possible applications for these various carbon-based films include microelectromechanical components, for which smooth, hard coatings are required.</P>

PROPERTIES OF THE CVD-Cu FULMS ON $SiO_2$ AND BPSG SUBSTRATES

Lee, Chong-Mu,Han, Sung-Hee 한국재료학회 1995 Fabrication and Characterization of Advanced Mater Vol.2 No.e2

The crystallite size of the chemical-vapor-deposited Cu film is usually so large that the Cu film does not fill contact holes or via holes in ultra-large-scaled integrated cirucits well. Therefore, is is very important to make the grain size of the Cu film small enough to fill small contact holes with high aspect ratio. Preteratment of the substrate surface with Ar plasma has been found to be effctive in making the grain size of the Cu film smaller and in enhancing the deposition rate of the Cu film. A Cu film deposited on borophosphosilicate glass(BPSG) has the characterisics of a smaller grain size, a lower resistivity, and a higher degree of (III) preferred orientation, but the lower deposition rate is slightly lower than that for Si$O_2$ glass. The higher resistivity of the Cu film on Si$O_2$ may be due to the formation of the intermetallic compound $Cu_15$S$i_4$ about 40$0^{\circ}C$ which is not formed at the Cu-BPSG interface at the same temperature. Also, the dependence of some properties of the Cu film on the substrate materials is discussed.

Etch Pit Formation on Metal Films by Wet Chemicals

Lee, Chong Mu 대한금속재료학회(대한금속학회) 1999 METALS AND MATERIALS International Vol.5 No.1

It is well known that the voids formed on metal interconnects shorten their lifetimes substantially in VLSI by inducing electromigration. Voids are often found on metal films after stripping photoresist films on metal films. These voids turn out to be etch pits formed by wet chemicals attacking the necks of the hillocks of CuAl₂ and Si precipitates. Etch pits are formed most easily by phenol-based strippers, while very few etch pits are formed by the ashing treatment (photoresist stripping employing a barrel type-plasma etching system). Also, it was found that etch pits tend to form more often on the metal films of Al-1%Si-0.5%Cu than on these of Al-1%Si. Therefore, the remedy for void formation after photoresist stripping may be as follows: 1) Minimization of hillock formation by lowering residual gas contamination during the metal deposition process, 2) using phenol-free organic strippers or a plasma etching technique for photoresist stripping, and 3) using AI-1%Si alloy instead of Al-1%Si-0.5Cu alloy for the metal interconnect.

Diamond (100) 및 (110) 표면구조와 표면에너지의 시뮬레이션

이종무(Chong-Mu Lee) 한국진공학회(ASCT) 1994 Applied Science and Convergence Technology Vol.3 No.3

Tersoff 포텐셜을 사용한 에너지최소화(lattice statics) 테크닉에 의하여 컴퓨터 시뮬레이션함으로써 다이아몬드 (100)과 (110) 표면의 구조와 표면에너지를 구하였다. 다이아몬드 (100)면과 (110)면의 reconstruction pattern은 각각 (1×l)과 (2×1)이며, 표면에너지는 각각 6,671.3 erg/cm²와 4,032.0 erg/cm²인 것으로 계산되었다. (100)면의 surface reconstruction은 첫번째 원자층과 두번째 원자층간의 간격이 [l00] 방향으로 수축되는 것으로 나타났다 . 한편 (110)면의 surface reconstruction은 주로 첫번째 원자층에서의 원자들이 [001] 방향으로 dimerization하는 것과 첫번째 원자층과 두번째 원자층간의 간격이 [110] 방향으로 수축되는 것으로 나타났다. 그밖에 표면의 각 원자층의 stress 성분들이 구해졌으며, 그것들이 표면흡착에 미치는 효과 등이 토의되었다. The structure and energy of diamond (100) and (110) surfaces have been calculated by the computer simulation employing the lattice statics technique based on Teroff potential. The simulation results suggest that the reconstruction patterns of (100) and (110) surfaces are (1×1) and (2×1) respectively and that the surface energies of the two surfaces are 6,671.3 and 4,032.0 erg/cm², respectively. According to the simulation results the surface reconstruction of the (100) surface mainly consists of the reduction of the interlayer spacing between the first and second atomic layers, while that of the (110) surface consists of the dimerization of atoms in the first atomic layer as well as the contraction of the interlayer spacing between the first and second atomic layers. Besides them the stress components of the first four atomic layers at the surface were obtained and their effects on the surface adsorption were discussed.