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Quanli Hu,최영진,강치중,이현호,윤태식 한국공업화학회 2015 Journal of Industrial and Engineering Chemistry Vol.24 No.-
The reflectivity and consequent color of anodic aluminum oxide (AAO) containing maghemite (g-Fe2O3) nanoparticles (NPs) were investigated. The hexagonally ordered pores of AAO were completely filled with maghemite NPs with 20 nm in diameter by the dip-coating process. The AAOs containing maghemite NPs have a reduced reflectivity of light at the wavelength below 600 nm, resulting in golden color. The reduced reflectivity and golden color of AAOs with NPs was explained by the absorption of light from blue to violet wavelength range by maghemite NPs. These results indicate the potential color-engineering of AAO by means of wavelength-selective absorption by incorporated NPs.
Quanli Hu,Myung-Soo Kim 한국탄소학회 2008 Carbon Letters Vol.9 No.4
Carbon blacks could be used as the filler for the electromagnetic interference (EMI) shielding. The poly vinyl alcohol (PVA) and polyvinylidene fluoride (PVDF) were used as the matrix for the carbon black fillers. Porous carbon blacks were prepared by CO2 activation. The activation was performed by treating the carbon blacks in CO2 to different degrees of burnoff. During the activation, the enlargement of pore diameters, and development of microporous and mesoporous structures were introduced in the carbon blacks, resulting in an increase of extremely large specific surface areas. The porosity of carbon blacks was an increasing function of the degree of burn-off. The surface area increased from 80 m2/g to 1142 m2/g and the total pore volume increased from 0.14073 cc·g-1 to 0.9343 cc·g-1. Also, the C=O functional group characterized by aldehydes, ketones, carboxylic acids and esters was enhanced during the activation process. The EMI shielding effectiveness (SE) of raw N330 carbon blacks filled with PVA was about 1 dB and those of the activated carbon blacks increased to the values between 6 and 9 dB. The EMI SE of raw N330 carbon blacks filled with PVDF was about 7 dB and the EMI SE increased to the range from 11 to 15 dB by the activation.
Resistive switching characteristics of Ag/MnO/CeO<sub>2</sub>/Pt heterostructures memory devices
Hu, Quanli,Kang, Tae Su,Abbas, Haider,Lee, Tae Sung,Lee, Nam Joo,Park, Mi Ra,Yoon, Tae-Sik,Kang, Chi Jung Elsevier 2018 Microelectronic engineering Vol.189 No.-
<P><B>Abstract</B></P> <P>The resistive switching characteristics of MnO and CeO<SUB>2</SUB> layers with a large resistance ratio (>10<SUP>5</SUP>) were demonstrated. The Ag/MnO/CeO<SUB>2</SUB>/Pt devices with heterostructures were fabricated. The bipolar resistive switching behaviors were caused by the formation and disruption of conducting filaments in the switching layers. In CeO<SUB>2</SUB> layer, the formation and rupture of conducting filaments was attributed to the reduction-oxidation reaction of CeO<SUB>2</SUB> and CeO<SUB>2−x</SUB>. The conduction mechanisms of ohmic conduction and Schottky emission had been investigated for resistance switching mechanism.</P> <P><B>Highlights</B></P> <P> <UL> <LI> The resistive switching behaviors with MnO/CeO<SUB>2</SUB> heterostructures were demonstrated. </LI> <LI> The Ag/MnO/CeO<SUB>2</SUB>/Pt devices showed stable bipolar resistive switching behaviors. </LI> <LI> The devices showed forming free process and large resistance ratio. </LI> <LI> The conducting filament was formed by oxygen vacancies </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>
Hu, Quanli,Park, Mi Ra,Abbas, Haider,Kang, Tae Su,Yoon, Tae-Sik,Kang, Chi Jung Elsevier 2018 MICROELECTRONIC ENGINEERING Vol.190 No.-
<P><B>Abstract</B></P> <P>The fabrication of 5×5 crossbar array with a line width of 20μm was demonstrated. The resistive switching characteristics in the bilayer structure of tantalum oxide and manganese oxide were investigated. The Ag/MnO/Ta<SUB>2</SUB>O<SUB>5</SUB>/Pt devices showed stable bipolar resistive switching properties with high resistance ratio, low switching voltage, and forming-free behavior. The conduction mechanisms of ohmic conduction and Schottky emission had been investigated for resistance switching mechanism.</P> <P><B>Highlights</B></P> <P> <UL> <LI> The fabrication of Ag/MnO/Ta<SUB>2</SUB>O<SUB>5</SUB>/Pt devices with 5×5 crossbar array was reported. </LI> <LI> Resistive switching properties of Ta<SUB>2</SUB>O<SUB>5</SUB> and MnO bilayer have been investigated. </LI> <LI> High resistance ratio, low switching voltage and forming-free behavior were obtained. </LI> <LI> Resistive switching was caused by formation and rupture of conducting filaments. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>
Hu, Quanli,Lee, Hyun Ho,Jeong, Dae-Yong,Kim, Yong-Sang,Kim, Ki-Bum,Xu, Jimmy,Yoon, Tae-Sik American Scientific Publishers 2012 Journal of nanoscience and nanotechnology Vol.12 No.3
<P>The reflectivity spectra and color of porous anodic aluminum oxide (AAO) nanostructures containing the assembly of silver (Ag) nanoparticles (NPs) with a diameter of -10 nm were investigated. The Ag NPs were assembled inside the pores of AAO with a diameter of -60 nm by dip-coating process during which Ag NPs adsorbed on the surface of AAO and driven inside the pores by capillary force upon the evaporation of solvent. The reflectivity spectra and associated colors of AAO with Ag NPs were determined by the plasmonic absorption of light by Ag NPs. Even with the monolayer coverage of Ag NPs in the pores of AAO, the reflectivity is significantly reduced specifically at -465 nm wavelength by a strong plasmonic absorption, resulting in its golden color. Aggregating Ag NPs by post-annealing at 300 and 400 degrees C changed the color to pink due to the red-shift of absorption. These results are indicative of potential color-engineering of NPs/AAO platform by wavelength-selective reduction of reflected light intensity and using it in direct optical read-out of change of surface and morphology conditions.</P>
Resistive switching characteristics of manganese oxide nanoparticle assembly with crossbar arrays.
Hu, Quanli,Shim, Jae Hyuk,Abbas, Yawar,Song, Woojin,Yoon, Tae-Sik,Choi, Young Jin,Kang, Chi Jung American Scientific Publishers 2014 Journal of nanoscience and nanotechnology Vol.14 No.11
<P>The fabrication of 3 x 3 crossbar arrays measuring 20 μm in width was demonstrated. The bipolar resistive switching characteristics in manganese oxide nanoparticles were investigated in the crossbar structure of top electrode (Au)/nanoparticle assembly/bottom electrode (Ti) on SiO2/Si substrate. The monodisperse manganese oxide nanoparticles measuring 13 nm in diameter were chemically synthesized by thermal decomposition of manganese acetate in the presence of oleic acid at high temperature. The nanoparticles were assembled as a layer measuring 30 nm thick by repeated dip-coating and annealing steps. The Au/nanoparticle assembly/Ti devices performed the bipolar behavior associated with the formation and sequential rupture of multiple conducting filaments in applying bias on Au electrode. When the voltage was swept from to +5 V to the Au top electrode, the reset voltage was observed at - 4.4 V. As the applied voltage swept from 0 to -5 V, the set voltage occurred at (-) -1.8 V.</P>