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Pt/Ti 전극을 사용한 산하된 다공질 폴리 실리콘 전계방출소자의 특성
한상국,박근용,최시영,Han Sang-Kug,Park Keun-Yong,Choi Sie-Young 대한전자공학회 2005 電子工學會論文誌-SD (Semiconductor and devices) Vol.42 No.6
In this paper, OPPS(oxidized porous poly-silicon) field emitters were fabricated by using various emitter-electrode metal and these electron emission characteristics were investigated for different thermal annealing effects. The addressed OPPS field emitter with Pt/Ti emitter electrode annealed at $300^{\circ}C$-1hr showed the efficiency of $2.98\%$ at $V_{ps}$=12 V and one annealed at $350^{\circ}C$-1hr showed the highest efficiency of $3.37\%$at $V_{ps}$=16V. They are resulted from the improvement of interfacial contact characteristics of thin emitter metal to an oxidized porous poly-silicon and the decrease of electrical resistance of emitter metal. The brightness of the OPPS field emitter increases linearly in $V_{ps}$ and after oxidation process for $900^{\circ}C$-50min, the brightness of the OPPS field emitter with the as-deposited Pt/Ti emitter electrode was 3600 cd/$m^2$ at the $V_{ps}$=15 V, 6260 cd/$m^2$ at the $V_{ps}$=20 V. Thermal treatment improved the adhesion between the Ti buffer layer and the oxidized porous poly-silicon and also played an important role in the uniform distribution of electric field to the emitter electrode. 본 논문에서는 다양한 에미터 금속 재료를 이용하여 산화된 다공질 폴리실리콘(Oxidized Porous Poly-Silicon) 전계방출 소자를 제조하였으며 에미터 금속의 열처리 효과가 산화된 다공질 폴리실리콘 전계방출소자의 특성에 미치는 영향을 조사하였다. 다양한 에미터 금속 중 구동전극을 가진 Pt/Ti 에미터 전극을 $300^{\circ}C$-1hr 열처리한 경우 전자방출 효율은 $V_{ps}$=12 V에서 최대 $2.98\%$의 효율을 나타내었으며, $350^{\circ}C$-1hr 열처리한 경우 $V_{ps}$=16V에서 $3.37\%$의 가장 높은 효율을 나타내었다. 이는 열처리 공정을 통해 OPPS 전계방출 소자 표면에 다수의 결정립 경계와 무수히 많은 미세한 다공질 간의 흡착성의 개선으로 인한 면 저항 감소에 의한 것을 알 수 있다. OPPS 전계 방출 소자를 디스플레이소자로 적용하기 위해 형광체 발광 특성을 조사해 본 결과, $900^{\circ}C$-50min 산화 후 Pt/Ti(5nm/2nm) 에미터 전극을 사용하여 제조된 OPPS 전계 방출 소자의 경우 15 V에서 3600 cd/$m^2$, 20 V에서 6260 cd/$m^2$의 상대적으로 높은 휘도를 나타내었다. 열처리는 Ti층과 OPPS 간의 흡착성을 개선시키고 에미터 전극에 고른 전계를 가하는 중요한 역할을 한다.
유중 용존수소 감지를 위한 Pd/Pt Gate MISFET 센서의 제조와 그 특성
백태성,이재곤,최시영 ( Tae Sung baek,Jae Gon Lee,Sie Yong Choi ) 한국센서학회 1996 센서학회지 Vol.5 No.4
The Pd/Pt gate MISFET type hydrogen sensors, for detecting dissolved hydrogen gas in the transformer oil, were fabricated and their characteristics were investigated. These sensors including diffused resistor heater and temperature monitoring diode were fabricated on the same chip by a conventional silicon process technique. The differential pair plays a role in minimizing the intrinsic voltage drift of the MISFET. To avoid the drift of the sensors induced by the hydrogen, the gate insulators of both FETs were constructed with double layers of silicon dioxide and silicon nitride. In order to eliminate the blister formation on the surface of the hydrogen sensing gate metal, Pt and Pd double metal layers were deposited on the gate insulator. The hydrogen response of the Pd/Pt gate MISFET suggests that the proposed sensor can detect the dissolved hydrogen in transformer oil with 40mV/10ppm of sensitivity and 0.14mV/day of stability.
Gold-Black 게이트를 이용한 MOSFET형 단백질 센서의 제조 및 특성
김민석 ( Min Suk Kim ),박근용 ( Keun Yong Park ),김기수 ( Ki Soo Kim ),김홍석 ( Hong Seok Kim ),배영석 ( Young Seuk Bae ),최시영 ( Sie Young Choi ) 한국센서학회 2005 센서학회지 Vol.14 No.3
N/A Research in the field of biosensor has enormously increased over the recent years. The metal-oxide semiconductor field effect transistor (MOSFET) type protein sensor offers a lot of potential advantages such as small size and weight, the possibility of automatic packaging at wafer level, on-chip integration of biosensor arrays, and the label-free molecular detection. We fabricated MOSFET protein sensor and proposed the gold-black electrode as the gate metal to improve the response. The experimental results showed that the output voltage of MOSFET protein sensor was varied by concentration of albumin proteins and the gold-black gate increased the response up to maximum 13 % because it has the larger surface area than that of planar-gold gate. It means that the expanded gate allows a larger number of ligands on same area, and makes the more albumin proteins adsorbed on gate receptor.
김료향(Ryo-Hyang Kim),이태용(Tae-Yong Lee),최시영(Sie-Young Choi) 대한전자공학회 2008 電子工學會論文誌-SD (Semiconductor and devices) Vol.45 No.9
최근 LCD나 PDP와 같은 Slim 평판디스플레이의 급속한 성장에 대응하기 위하여, 기존의 부피가 큰 CRT의 두께 축소를 위한 광각화 기술이 요구 되어 지고 있다. 그러나 이러한 광각화한 Screen을 가진 CRT를 만드는 데는 많은 문제점이 있다. 특히 Screen의 Black Matrix를 형성함에 있어서, 설계자의 의도 대비 과도하게 형성되거나, 미형성 되는 큰 문제가 발생한다. 이러한 문제는 광각화 됨으로 인하여 민감도가 증가하여 발생하게 된다. 이러한 부분을 해결하기 위해서 본 논문에서는 새로운 filter system을 제안한다. 기존에 사용하던 filter to panel 방식에서 panel to filter control 방식을 사용함으로써, 설계자의 의도대로 쉽게 Black Matrix를 조절할 수 있다. 본 논문은 새로운 광각화된 CRT에서 좀 더 나은 screen품질을 확보할 수 있도록 새로운 filter design 방법을 제안한다. In recent days, a wide angle for slim depth in CRT(Cathode ray tube) is required to meet other rapidly growing slim FPD such as LCD and PDP. However, in making the CRT with a wide angle screen, problems, such as a difficulty in forming black matrix, and excessive formation of black matrix, can be occurred. In this work, we designed a new exposure filter system to avoid these problems for a wide angle CRT. We changed the design concept from a filter-to-Panel method to a Panel-to-filter control method, which can control the Black Matrix to easily satisfy the user's request. This study suggests new filter design method for a wide angle CRT which has good screen quality.
자기조립 단분자막을 이용한 MOSFET형 단백질 센서의 제작 및 특성
한승우 ( Seung Woo Han ),박근용 ( Keun Yong Park ),김민석 ( Min Suk Kim ),김홍석 ( Hong Seok Kim ),배영석 ( Young Seuk Bae ),최시영 ( Sie Young Choi ) 한국센서학회 2004 센서학회지 Vol.13 No.2
N/A Protein and gene detection have been growing importance in medical diagnostics. Field effect transistor (Phi`) - type biosensors have many advantages such as miniaturization, standardization, andmass-production. In this work, we have fabricated metal-oxide-semiconductor (MOS) FET that operates as molecular recognitions based electronic sensor. Measurements were taken with the devices under phosphate buffered saline solution. The drain current (I_(D)) was decreased after forming self-assembled mono-layers (SAMs) used to capture the protein, which resulted from the negative charges of SAMs, and increased after forming protein by 11,5% at V_(G)= 0 V due to the positive charges of protein.