http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Use of Gas-Sensor Array Technology in Lung Cancer Diagnosis
( Young Jun Kim ),( Han Young Yu ),( In Bok Baek ),( Chang Geun Ahn ),( Bong Kuk Lee ),( Yar Kyeon Kim ),( Yong Sun Yoon ),( Ji Eun Lim ),( Byeong Jun Lee ),( Won Ik Jang ),( Jeong Ho Park ),( Chang A 한국센서학회 2013 센서학회지 Vol.22 No.4
Gas-sensor array technology, which has been much utilized in the field of food technology by the name of ‘electronic nose’ is drawing attention in diagnosing lung cancer based on the analysis of the exhaled human breath. Much understanding has been accomplished about the composition of the volatile organic compounds (VOCs) of the human exhaled breath, in spite of some variations depending on research groups due mainly to lack of the standardization of the sensing procedures. Since VOCs may be produced during the process of cellular metabolism, difference in the cellular metabolism between healthy cells and lung cancer cells are expected to be reflected on the composition variation of the exhaled VOCs. Several studies have attempted to apply the gas-sensor array technology to lung cancer analysis using many different types of sensors including metal oxide, carbon black-polymer composite, surface acoustic wave, and gold nanoparticles. In this mini-review VOC as biomarkers, sensor array technology and application of the array technology for the diagnosis of cancer disease have been described.
Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistors for Nano-Regime Applications
( Seong Jae Lee ),( Moon Gyu Jang ),( Yar Kyeon Kim ),( Myung Sim Jeon ),( Kyoung Wan Park ) 대한금속재료학회 ( 구 대한금속학회 ) 2005 ELECTRONIC MATERIALS LETTERS Vol.1 No.1
Erbium-/platinum-silicided n/p-type Schottky barrier metal-oxide-semiconductor-field-effect transistors(SB-MOS-FETs) were manufactured at various sizes, from 20㎛ to 23 ㎚. The manufactured SB-MOSFETs showed excellent drain induced barrier lowering(DIBL) characteristics due to the presence of a Schottky barrier between the source and the channel. The DIBL and subthreshold swing(SS) characteristics were comparable to the values of ultimate scaling limit of double gate(DG) MOSFETs, which shows the possible application of SB-MOSFETs in the nanoscale reginte.