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Heat Effect and Impact Resistance during Electromigration on Cu-Sn Interconnections
( Tae Kyu Lee ),( Fay Hua ),( J. W. Morris ) 대한금속재료학회 ( 구 대한금속학회 ) 2006 ELECTRONIC MATERIALS LETTERS Vol.2 No.3
The influence of electron current on the diffusion of Sn and Cu in simply designed Cu-Sn-Cu diffusion couples was investigated. The diffusion couples were designed to permit in situ studies of the progress of diffusion. Tests were done at various temperature in air with a current density over 5×10³A/㎠. The results showed Cu movement into Sn in the direction of the electron current accompanied by grain boundary sliding of the Sn grains. Intermetallic compound growth was observed at the anode side, with intermetallic dissolution at the cathode side. The temperature increase during current stressing was measured using thermo-couples and IR(Infra Red) photography. The impact strength of the Cu-Sn interconnections was measured after current stressing using a modified micro-Charpy impact testing method.