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A study on the Raman spectra of Al-doped and Ga-doped ZnO ceramics
Jang, M.S.,Ryu, M.K.,Yoon, M.H.,Lee, S.H.,Kim, H.K.,Onodera, A.,Kojima, S. Elsevier 2009 Current Applied Physics Vol.9 No.3
Al<SUB>x</SUB>Zn<SUB>1-x</SUB>O and Ga<SUB>y</SUB>Zn<SUB>1-y</SUB>O ceramics were synthesized through a solid-state reaction technique. The crystal phase of the samples was identified by an X-ray diffraction experiment. For each sample, the electrical resistivity was determined. The Al 2-mol%-doped and Ga 0.5-mol%-doped ZnO ceramics had the lowest resistivity. Raman measurement was performed to study the doping effects in the ZnO ceramics including ZnO single crystal as a reference. The line-shape parameters, q<SUB>1</SUB> and Γ<SUB>1</SUB>, at the same certain doping rate and the solubility limit of Al (2mol%) and Ga (0.5mol%) in ZnO ceramics, are strongly related to the each other, and that the solubility limit plays an important role. The second-order Raman peak at 1162cm<SUP>-1</SUP> of the ZnO ceramics was fitted by Fano formalism. The Fano's fitting parameters, such as the lifetime of phonon and the degree of asymmetry degree of the second-order Raman peak changed as the amounts of dopants were varied.