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        Carrier Transfer in Closely Stacked GaAs/AlGaAs Quantum Dots Grown by Using Droplet Epitaxy

        Martin Elborg,Yuanzhao Yao,Takeshi Noda,Takaaki Mano,Yoshiki Sakuma,Raman Bekarevich,Kazutaka Mitsuishi 한국물리학회 2018 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.72 No.11

        We investigate the carrier transfer in stacked droplet epitaxially grown GaAs quantum dots (QDs) in experiments and calculations. While in the Stranski-Krastanov growth mode, QDs align due to stain propagation, droplet epitaxy QDs pose a difficulty for achieving coupled stacked QDs due to their random positioning. We demonstrate that carrier transfer is possible in such structures by designing their size and areal density. We achieve a significant geometrical overlap between stacked QDs by employing an areal density of 3.9×1010 dots/cm2 and an average QD diameter of 45.5 nm. A clear redshift in the position of the photoluminescence peak is observed when the separation layer’s thickness is reduced from 16 nm to 2.5 nm. Theoretical calculations of the electronic states of the stacked QDs with varying degrees of misalignment confirm that this red-shift is mainly caused by a lowering of the ground state energy due to coupling. To separately analyze the effect of vertical carrier transfer between QDs, we investigate samples with two layers of stacked QDs of different sizes. We demonstrates in photoluminescence experiments that carriers readily transfer to the larger QD when the barrier thickness is reduced to a degree where tunneling is possible.

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        Preliminary Report on the Breeding of Robust and Resistant-NPV and High Quality Silkworm Race "Shengming No.1" for Summer-autumn Rearing

        ( Yuan Zhao ),( Ke Pin Chen ),( Qing Yao ),( Yang Chun Wu ),( Jian Zhang ),( Xi Jie Guo ) 한국잠사학회 2006 International Journal of Industrial Entomology Vol.13 No.2

        Seveval Chinese and Japanese varieties with good characters were used in the breeding. After 5 years (15 generations), a pair of robust and high quality silkworm variety with NPV resistance was bred by means of a combination of crossing and pedigree selection complemented by the selection of NPV resistance. The variety was identified jointly nationwide in 2003 and 2004, and appraised by National Mulberry and Silkworm Appraising Committee. Results are as follows: its cocooning rate is over 93%, shell rate 23-25%, filament length 1200-1300 meters, reelability 75-88%, Length of non-broken cocoon filament 900-1100 meters, raw silk rate 17-19%, neatness 95-97 points, and cocoon crop, cocoon shell weight and raw silk weight per 10 000 larvae is higher than those of the control variety by 7-10%, 14-19% and 14-18%, respectively. The variety is not only robust, resistant to high temperature and NPV, easy to rear, uniform in hatching, molting and maturing, but also lays more eggs, and its fecundity is high. It is suitable to rear in the Yangtze River Basin, the Yellow River basin and the Pearl River basin of China.

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