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- 저자 : Ying Lei Du (검색결과 3 건)
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이기환,김영유,두영뢰,우배매 公州大學校 基礎科學硏究所 1998 自然科學硏究 Vol.7 No.-
The photoluminescence (PL) spectra from p-type a-porous silicon carbides prepared under UV photo-assisted process and under dark-current condition are investigated in detail. Emission bands with peak energies of 2.35, 2.50, 2.70, and 3.43 are resolved. The PL stability in tune and the PL difference arising from different tuning excitation energies are studied. It is found that the PL spectra of the a-porous silicon carbide depend strongly on the preparation conditions for electrochemical etching. The PL spectrum of the sample prepared under photo-assisted process has an enhancement on the lower-energy side of the emission; on the contray, another one under dark-current condition has an enhancement at the higher energy side, and the former stability is better than the latter one, and the latter PL intensity decreases with the increase of the time in the air. The reasons about these differences are discussed.
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OPTICAL CHARACTERISTICS OF POROUS SILICON CARBIDE BY PHOTOLUMINESCENCE SPECTROSCOPY
Lee, Ki-Hwan,Du, Ying-Lei,Lee, Tae-Ho Korean Society of Photoscience 1999 Journal of Photosciences Vol.6 No.4
We have been prepared the porous silicon carbide (PSC) by electrochemical etching of silicon carbide single crystals. Samples of PSC have been studied by the methods of scanning electron microscope (SEM) and photoluminescence (PL). Two PL bands attributed to the blue and green light emission were observed in this study. According to the anodization conditions, the main source of emission in the oxidized layers of PSC lies in the different surface defect centers which consist of different geometrical structures due to the polytypes. It means that origin of these PL bands may be existed in different size pores simultaneously. The present results indicate that the high energy band comes from the top porous layers while the low energy band comes from the lower porous layers.
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Photoluminescence and Photoluminescence Excitation from Porous Silicon Carbide
이기환,이태호,Lee, Gi Hwan,Ying Lei Du,Lee, Tae Ho Korean Chemical Society 2000 Bulletin of the Korean Chemical Society Vol.21 No.8
The dependence of photoluminescence (PL) and photoluminescence itation (PLE) on preparation condi-tions and the aging of porous silicon carbide (PSC) have been investigatted. The fiber size of the material pre-pared under dark-current mode, labele d DCM, was larger than that of the photoassisted (PA)process.The intensity of the PL spectrum for the PA condition was higher than that of the DCM condition. The PA condition giving small fiber size exhibited amore prominent high-energy component but the emission bands of both con-ditionsobserved were rather similar. The origin of the PL may have played an importantrole in the surface defect center introduced by the reaction conditions ofHFatthe surface of the silicon carbide. Selective excita-tion of the PL bandsusingdifferent excitation wavelengths has been used to identify distinct componentswith-in the PL bandwidth. Two main PL bands with peak wavelength of494 and534 nm were clearly resolved. On the other hand, selectivc emission of the PLEbands using different emission wavelengths has been used to identify distinct components within the PLE bandwidth. The higher energy band with peak wavelength of 338 nm and the lower energy bands involving 390,451 and 500 nm were clearly resolved. According to the pro-ionged aging in air, PL spectra appearedasone band, This emission probably originated from states localized to the band-to-band recombination due to the oxidation on the crystallite surface.
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