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Electronic Properties of AnSn3 (An = Th, U, Np, and Pu)
Yasutomi Tatetsu,Eijiro Sakai,Takahiro Maehira 한국물리학회 2013 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.63 No.3
The energy band structures of AnSn3 (An=Th, U, Np, and Pu) are investigated by using arelativistic linear augmented plane wave method with the exchange-correlation potential in thelocal density approximation. The energy bands near the Fermi level are mainly caused by thehybridization between the 5f and Sn 5p electrons of the actinides. The similarity of the Fermi surfacestructures in the AnSn3 compounds can be understood by using the change in the electron numbersinside the Fermi surfaces based on the rigid-band picture. The theoretical angular dependence ofthe de Haas-van Alphen frequencies in ThSn3 has been investigated.
Electronic Structures of of PuX (X=S, Se, Te)
Takahiro Maehira,Eijiro Sakai,Yasutomi Tatetsu 한국물리학회 2013 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.63 No.3
We have calculated the energy band structures and the Fermi surfaces of PuS, PuSe, and PuTeby using a self-consistent relativistic linear augmented-plane-wave method with the exchange andcorrelation potential in the local density approximation. In general, the energy bands near theFermi level are mainly caused by the hybridization between the Pu 5f and the monochalcogenidep electrons. The obtained main Fermi surfaces consisted of two hole sheets and one electron sheet,which were constructed from the band having both the Pu 5f state and the monochalcogenide pstate.