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Dark Conductivity in Semi-Insulating Crystals of CdTe:Sn
Viktor P. Makhniy,Sklyarchuk Valeriy Mykhailovyc,Yuri Vorobiev,Paul Horley 대한전자공학회 2015 Journal of semiconductor technology and science Vol.15 No.2
We prepared semi-insulating CdTe for radiation detectors by isothermal annealing of single crystals grown by Bridgeman technique in a sealed quartz container filled with Sn vapor. The resistivity of CdTe:Sn samples thus obtained was of order of 10<SUP>10</SUP> Ohm·cm at room temperature with electrons lifetime of 2´10<SUP>-8</SUP> s, which is appropriate for the applications desired. Analysis of electric transport characteristics depending on temperature, sample thickness and voltage applied revealed the presence of traps with concentration of about (4-5)´10<SUP>12</SUP> cm<SUP>-3</SUP> with the corresponding energy level at 0.8 ? 0.9 eV counted from the bottom of conduction band. The conductivity was determined by electron injection from electrodes in space charge limited current mode.
Dark Conductivity in Semi-Insulating Crystals of CdTe:Sn
Makhniy, V.P.,Sklyarchuk, V.M.,Vorobiev, Yu.V.,Horley, P.P. The Institute of Electronics and Information Engin 2015 Journal of semiconductor technology and science Vol.15 No.2
We prepared semi-insulating CdTe for radiation detectors by isothermal annealing of single crystals grown by Bridgeman technique in a sealed quartz container filled with Sn vapor. The resistivity of CdTe:Sn samples thus obtained was of order of $10^{10}Ohm{\cdot}cm$ at room temperature with electrons lifetime of $2{\times}10^{-8}$ s, which is appropriate for the applications desired. Analysis of electric transport characteristics depending on temperature, sample thickness and voltage applied revealed the presence of traps with concentration of about $(4-5){\times}10^{12}cm^{-3}$ with the corresponding energy level at 0.8 - 0.9 eV counted from the bottom of conduction band. The conductivity was determined by electron injection from electrodes in space charge limited current mode.
Dark Conductivity in Semi-Insulating Crystals of CdTe:Sn
V. P. Makhniy,V. M. Sklyarchuk,Yu. V. Vorobiev,P. P. Horley 대한전자공학회 2015 Journal of semiconductor technology and science Vol.15 No.2
We prepared semi-insulating CdTe for radiation detectors by isothermal annealing of single crystals grown by Bridgeman technique in a sealed quartz container filled with Sn vapor. The resistivity of CdTe:Sn samples thus obtained was of order of 1010 Ohm∙cm at room temperature with electrons lifetime of 2×10-8 s, which is appropriate for the applications desired. Analysis of electric transport characteristics depending on temperature, sample thickness and voltage applied revealed the presence of traps with concentration of about (4-5)×1012 cm-3 with the corresponding energy level at 0.8 – 0.9 eV counted from the bottom of conduction band. The conductivity was determined by electron injection from electrodes in space charge limited current mode.
Evidence for a narrow structure at W∼1.68 GeV in η photoproduction off the neutron
Kuznetsov, V.,Churikova, S.,Gervino, G.,Ghio, F.,Girolami, B.,Ivanov, D.,Jang, J.,Kim, A.,Kim, W.,Ni, A.,Vorobiev, Yu.,Yurov, M.,Zabrodin, A. North-Holland Pub. Co 2007 Physics letters: B Vol.647 No.1
New results on quasi-free η photoproduction on the neutron and proton bound in a deuteron target are presented. The γn->ηn quasi-free cross section reveals a bump-like structure which is not seen in the cross section on the proton. This structure may signal the existence of a relatively narrow (M∼1.68 GeV, Γ=<30 MeV) baryon state.