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- 저자 : Toshiya Ohashi (검색결과 2 건)
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Electroluminescence from n-Zn(Mg,Cd)O/ p-4H-SiC:Al Heterojunctions
Kenji Yamamoto,Toshiya Ohashi,Atsushi Nakamura,Temmyo Jiro 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.5
Electroluminescence (EL) from n-Mg0:18Zn0:82O/ n-Zn(Mg,Cd)O/ p-4H-SiC:Al heterojunction diodes fabricated by using remote-plasma-enhanced metal-organic chemical-vapor deposition was measured to investigate some recombination processes of hole injection by changing the bandgap of n-Zn(Mg,Cd)O. EL emissions from the heterojunction utilizing n-Zn1-xCdxO (x > 0.07) were observed to coincide with the photoluminescence (PL) emission energy of the corresponding alloy content due to hole injection from the p-4H-SiC:Al to the n-Zn1-xCdxO layer in the type-I het-erojunctions. However, broad EL emissions from the type-II heterojunctions utilizing n-ZnO and n-Mg0:12Zn0:88O were observed at around 2.8 eV. These broad ELs were caused by the recombination of carriers in p-4H-SiC:Al due to electron injection from n-Zn(Mg,Cd)O to p-4H-SiC:Al and by the recombination of spatially separated carriers at the heterointerface.
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Fabrication and EL Emission of ZnO-Based Heterojunction Light-Emitting Devices
Sandip Gangil,Atsushi Nakamura,Kenji Yamamoto,Toshiya Ohashi,Jiro Temmyo 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.1
Nitrogen-doped p-type MgZnO films were successfully realized on a-plane sapphire substrates and were used in an n-MgyZn1-yO/n-Zn1-xCdxO/p-MgyZn1-yO:N/p-SiC heterojunction structure to act as barrier layer leading to sharpening of the electroluminescence (EL) in terms of reducing the full width at half maximum (FWHM). The X-ray photoelectron spectroscopy (XPS) analysis of the c-axis-oriented nitrogen-doped MgZnO film confirmed the presence of Mg2+ at 49.8 eV in Mg (2p region) in the ZnO:N lattice, replacing Zn2+. Zn-N formations were clearly visible in the Zn (2p3=2) region and the signal for nitrogen-replacing oxygen (NO) emerged at 396.9 eV. With respect to ZnO:N polar films (n-type in as-grown conditions), as-grown polar MgZnO:N films had the upper hand by holding a p-type nature due to Mg incorporation ascribed to the formation of Mg- related (interactions of Mg with N) tri-atomic acceptor-donor-acceptor-configured p-type supportive complexes. The nitride formations were noticeable in the X-ray diffraction (XRD) spectra. The formation of complexes and their effects are discussed in this paper. Nitrogen-doped p-type MgZnO films were successfully realized on a-plane sapphire substrates and were used in an n-MgyZn1-yO/n-Zn1-xCdxO/p-MgyZn1-yO:N/p-SiC heterojunction structure to act as barrier layer leading to sharpening of the electroluminescence (EL) in terms of reducing the full width at half maximum (FWHM). The X-ray photoelectron spectroscopy (XPS) analysis of the c-axis-oriented nitrogen-doped MgZnO film confirmed the presence of Mg2+ at 49.8 eV in Mg (2p region) in the ZnO:N lattice, replacing Zn2+. Zn-N formations were clearly visible in the Zn (2p3=2) region and the signal for nitrogen-replacing oxygen (NO) emerged at 396.9 eV. With respect to ZnO:N polar films (n-type in as-grown conditions), as-grown polar MgZnO:N films had the upper hand by holding a p-type nature due to Mg incorporation ascribed to the formation of Mg- related (interactions of Mg with N) tri-atomic acceptor-donor-acceptor-configured p-type supportive complexes. The nitride formations were noticeable in the X-ray diffraction (XRD) spectra. The formation of complexes and their effects are discussed in this paper.
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