http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Antihistaminic activity of Abrus precatorius using clonidine induced catalepsy in mice
Taur, Dnyaneshwar J.,Patil, Ravindra Y. 경희한의학연구센터 2012 Oriental Pharmacy and Experimental Medicine Vol.12 No.1
Abrus precatorius Linn (Fabaceae) is a climbing shrub; leaves are pinnate with many pairs of leaflets. Leaves 5-10 cm long, leaflets 10-20 pairs, opposite, flowers are pink clustered. The roots, stems, and leaves contain glycyrrhizin, sweet in taste. Leaves are traditionally have been used in the treatment of fever, asthma and caries of teeth. Clonidine induces catalepsy by releasing histamine from mast cells which is responsible for different asthmatic conditions. The leaves of A. precatorius traditionally used for asthma, hence objective of present study was to evaluate antihistaminic activity of A. precatorius using clonidine induced catalepsy in mice. In present study ethanol extract of A. precatorius leaves (EAPL) at doses 100, 125, 150 mg/kg i.p were evaluated for antihistaminic activity using clonidine and haloperidol induced catalepsy in mice. Finding of investigation showed that chlorpheniramine maleate (CPM) and EAPL inhibit clonidine induced catalepsy significantly P<0.001 when compare to control group, while CPM fail to inhibit haloperidol induced catalepsy. Present study concludes that EAPL possesses antihistaminic activity.
Chen, Han-Ping,Yuan, Yu,Yu, Bo,Ahn, Jaesoo,McIntyre, Paul C.,Asbeck, Peter M.,Rodwell, Mark J. W.,Taur, Yuan IEEE 2012 IEEE transactions on electron devices Vol.59 No.9
<P>This paper presents a detailed analysis of the multifrequency capacitance–voltage and conductance–voltage data of <TEX>$\hbox{Al}_{2}\hbox{O}_{3}/\hbox{n-InGaAs}$ </TEX> MOS capacitors. It is shown that the widely varied frequency dependence of the data from depletion to inversion can be fitted to various regional equivalent circuits derived from the full interface-state model. In certain regions, incorporating bulk-oxide traps in the interface-state model enables better fitting of data. By calibrating the model with experimental data, the interface-state density and the trap time constants are extracted as functions of energy in the bandgap, from which the stretch-out of gate voltage is determined. It is concluded that the commonly observed decrease of the 1-kHz capacitance toward stronger inversion is due to the increasing time constant for traps to capture majority carriers at the inverted surface.</P>
Ultra-low power 1T-DRAM in FDSOI technology
El Dirani, H.,Lee, K.H.,Parihar, M.S.,Lacord, J.,Martinie, S.,Barbe, J-Ch.,Mescot, X.,Fonteneau, P.,Broquin, J.-E.,Ghibaudo, G.,Galy, Ph.,Gamiz, F.,Taur, Y.,Kim, Y.-T.,Cristoloveanu, S.,Bawedin, M. ELSEVIER 2017 MICROELECTRONIC ENGINEERING Vol.178 No.-
<P><B>Abstract</B></P> <P>A systematic study of a capacitorless 1T-DRAM fabricated in 28nm FDSOI technology is presented. The operation mechanism is based on band modulation. The Z<SUP>2</SUP>-FET memory cell features a large current sense margin and small OFF-state current at 25°C and 85°C. Moreover, low power consumption during state ‘1’ writing is achieved with ~0.5V programming voltage. These specifications make the Z<SUP>2</SUP>-FET an outstanding candidate for low-power eDRAM applications.</P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>