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A stamped PEDOT:PSS–silicon nanowire hybrid solar cell
Moiz, Syed Abdul,Nahhas, Ahmed Muhammad,Um, Han-Don,Jee, Sang-Won,Cho, Hyung Koun,Kim, Sang-Woo,Lee, Jung-Ho IOP Pub 2012 Nanotechnology Vol.23 No.14
<P>A novel stamped hybrid solar cell was proposed using the stamping transfer technique by stamping an active PEDOT:PSS thin layer onto the top of silicon nanowires (SiNWs). Compared to a bulk-type counterpart that fully embeds SiNWs inside PEDOT:PSS, an increase in the photovoltaic efficiency was observed by a factor of ∼4.6, along with improvements in both electrical and optical responses for the stamped hybrid cell. Such improvements for hybrid cells was due to the formation of well-connected and linearly aligned active PEDOT:PSS channels at the top ends of the nanowires after the stamping process. These stamped channels facilitated not only to improve the charge transport, light absorption, but also to decrease the free carriers as well as exciton recombination losses for stamped hybrid solar cells.</P>
Syed Abdul Moiz,Mansoor M. Ahmed,Kh. S. Karimov 한국전자통신연구원 2005 ETRI Journal Vol.27 No.3
In this paper the effect of temperature on the electrical properties of organic semiconductor disperse orange dye 25 (OD) have been examined. Thin films of OD have been deposited on In2O3 substrates using a centrifugal machine. DC current-voltage (I-V) characteristics of the fabricated devices (Al/OD/In2O3) have been evaluated at varying temperatures ranging from 40 to 60°C. A rectification behavior in these devices has been observed such that the rectifying ratio increases as a function of temperature. I-V characteristics observed in Al/OD/In2O3 devices have been classified as low temperature (≤ 50°C) and high temperature characteristics (approximately 60°C). Low temperature characteristics have been explained on the basis of the charge transport mechanism associated with free carriers available in OD, whereas high temperature characteristics have been explained on the basis of the trapped space-charge-limited current. Different electrical parameters such as traps factor, free carrier density, trapped carrier density, trap density of states, and effective mobility have been determined from the observed temperature dependent I-V characteristics. It has been shown that the traps factor, effective mobility, and free carrier density increase with increasing values of temperature, whilst no significant change has been observed in the trap density of states.