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Stimulated Emission with 349-nm Wavelength in GaN/AlGaN MQWs by Optical Pumping
Sung-Bock Kim,Sung-Bum Bae,Young-Ho Ko,Dong Churl Kim,Eun-Soo Nam 한국진공학회(ASCT) 2017 Applied Science and Convergence Technology Vol.26 No.4
The crack-free AlGaN template has been successfully grown by using selective area growth with triangular GaN facet. The triangular GaN stripe structure was obtained by vertical growth rate enhanced mode with low growth temperature of 950℃ and high growth pressure of 500 torr. The lateral growth rate enhanced mode of AlGaN for crackfree and flat surface was also investigated. Low pressure of 30 torr and high V/III ratio of 4400 were favorable for lateral growth of AlGaN. It was confirmed that the 4 μm -thick Al0.2Ga0.8N was crack-free over entire 2-inch wafer. The dislocation density of Al0.2Ga0.8N was as low as ~7.6 × 10<SUP>8</SUP> /cm<SUP>2</SUP> measured by cathodoluminescence. Based on the high quality AlGaN with low dislocation density, the ultraviolet laser diode epitaxy with cladding, waveguide and GaN/AlGaN multiple quantum well (MQW) was grown by metalorganic chemical vapor deposition. The stimulated emission at 349 nm with full width at half maximum of 1.8 nm from the MQW was observed through optical pumping experiment with 193 nm KrF laser. We also have fabricated the deep ridge type ultraviolet laser diode (UV-LD) with 5 μm-wide and 700 μm-long cavity for electrical properties. The turn on voltage was below 5 V and the resistance was ~55 Ω at applied voltage of 10 V. The amplified spontaneous emission spectrum of UV-LD was also observed from pulsed current injection.
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JongHyeobBaeK,HyunWooSong,SungBockKim,NamHwang,JehaKim,DaeKonOh 한국물리학회 2002 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.41 No.3
We investigated the degradation behaviors of 1310-nm spot-size converter integrated laser diodes (SSC-LDs) grown by using the metal-organic chemical-vapor deposition (MOCVD) method. The vertically tapered SSC and the active region employing a buried heterostructure were butt-jointed to each other. The characteristic temperature of the SSC-LD was compared with that of an LD without the SSC. All chips experienced the burn-in test before long-term life scanning. The slope eciencies of the SSC-LDs scarcely changed after the aging process, indicating that no further degradation accurred within the active region. This work focused mainly on the role of the SSC in device degradation behavior.
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