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RISS 인기검색어
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- 저자 : Subhashis Das (검색결과 4 건)
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Samanta Subhashis,Das Debajyoti 한국물리학회 2021 Current Applied Physics Vol.23 No.-
Low-temperature synthesis of highly transparent conducting B-doped (p-type) nc-SiOX:H films has been pursued by 13.56 MHz plasma-CVD, using a combination of SiH4, CO2 and B2H6, diluted by H2 and He. Higher substrate temperature (TS) encourages nanocrystallization in B-doped nc-SiOX:H network by reducing bonded H-content, while bonded O-content also reduces simultaneously. At optimized TS = 150 ◦C, p–nc-SiOX:H film having an optical band gap ~1.98 eV, high conductivity ~0.18 S cm 1, has been obtained via dopant-induced escalation of the electrically active carriers at a deposition rate ~5.3 nm/min. The p–nc-SiOX:H film appears as a promising window layer for the top sub-cell of multi-junction silicon solar cells. A single-junction nc-Si:H based p-i-n solar cell of efficiency (η) ~7.14% with a current-density (JSC) ~14.18 mA/cm2, reasonable fill-factor (FF) ~66.2% and open-circuit voltage (VOC) ~0.7606 V has been fabricated, using the optimum p-type nc-SiOX:H as the window layer deposited at TS = 150 ◦C.
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Soumya Bhattacharjya,Subhasis Chakraborti,Subhashis Das 국제구조공학회 2015 Structural Engineering and Mechanics, An Int'l Jou Vol.56 No.5
There is a growing trend of considering uncertainty in optimization process since last few decades. In this regard, Robust Design Optimization (RDO) scheme has gained increasing momentum because of its virtue of improving performance of structure by minimizing the variation of performance and ensuring necessary safety and feasibility of constraint under uncertainty. In the present study, RDO of reinforced concrete folded plate and shell structure has been carried out incorporating uncertainty in the relevant parameters by Monte Carlo Simulation. Folded plate and shell structures are among the new generation popular structures often used in aesthetically appealing constructions. However, RDO study of such important structures is observed to be scarce. The optimization problem is formulated as cost minimization problem subjected to the force and displacements constraints considering dead, live and wind load. Then, the RDO is framed by simultaneously optimizing the expected value and the variation of the performance function using weighted sum approach. The robustness in constraint is ensured by adding suitable penalty term and through a target reliability index. The RDO problem is solved by Sequential Quadratic Programming. Subsequently, the results of the RDO are compared with conventional deterministic design approach. The parametric study implies that robust designs can be achieved by sacrificing only small increment in initial cost, but at the same time, considerable quality and guarantee of the structural behaviour can be ensured by the RDO solutions.
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Rahul Kumar,Ankush Bag,Partha Mukhopadhyay,Subhashis Das,Dhrubes Biswas 대한금속·재료학회 2016 ELECTRONIC MATERIALS LETTERS Vol.12 No.3
There exist discrepancies between reports on cross-hatch (CH)behaviour and its interaction with interfacial misfit dislocations in theliterature. In this work, a thorough CH analysis has been presentedby use of conventional and statistical analysis of AFM data. It hasbeen shown that correlation between cross-hatch and misfitdislocation depends on the growth conditions and residual strain. Anisotropic relaxation and dislocations, composition and epitaxial tilthave been studied by HRXRD analysis. To illustrate these findings,molecular beam epitaxy (MBE) grown metamorphic InGaAs onGaAs (001) samples have been used. Reciprocal space mapping hasbeen used to characterize the composition and relaxation whileepilayer tilt and dislocation have been investigated by HRXRDrocking curve. A better understanding of CH pattern can enable us tominimize the surface roughness for metamorphic electronic devicesand to fully utilize the quasi-periodic undulation in cross-hatch inapplications, like ordered quantum dot growth.
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Reverse Bias Leakage Current Mechanism of AlGaN/InGaN/GaN Heterostructure
Apurba Chakraborty,Saptarsi Ghosh,Partha Mukhopadhyay,Sanjay K. Jana,Syed Mukulika Dinara,Ankush Bag,Mihir K. Mahata,Rahul Kumar,Subhashis Das,Palash Das,Dhrubes Biswas 대한금속·재료학회 2016 ELECTRONIC MATERIALS LETTERS Vol.12 No.2
The reverse bias leakage current mechanism of AlGaN/InGaN/GaNheterostructure is investigated by current-voltage measurement intemperature range from 298 K to 423 K. The Higher electric field acrossthe AlGaN barrier layer of AlGaN/InGaN/GaN double heterostructuredue to higher polarization charge is found to be responsible for strongFowler-Nordheim (FN) tunnelling in the electric field higher than3.66 MV/cm. For electric field less than 3.56 MV/cm, the reverse biasleakage current is also found to follow the trap assisted Frenkel-Poole(FP) emission in low negative bias region. Analysis of reverse FPemission yielded the barrier height of trap energy level of 0.34 eV withrespect to Fermi level.
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