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Sona Carpenter,Herbert Zirath,Zhongxia Simon He,Mingquan Bao 한국통신학회 2021 Journal of communications and networks Vol.23 No.2
This paper presents design and characterizationof single-chip 110–170 GHz (D-band) direct conversion in phase/quadrature-phase (I/Q) transmitter and receiver monolithicmicrowave integrated circuits (MMICs), realized in a 130 nm SiGeBiCMOS process with ft/fmax of 250 GHz/370 GHz. The chipset issuitable for low power wideband communication and can be usedin both homodyne and heterodyne architectures. The Transmit ter chip consists of a six-stage power amplifier, an I/Q modulator,and a LO multiplier chain. The LO multiplier chain consists offrequency sixtupler followed by a two-stage amplifier. It exhibitsa single sideband conversion gain of 23 dB and saturated outputpower of 0 dBm. The 3 dB RF bandwidth is 31 GHz from 114 to145 GHz. The receiver includes a low noise amplifier, I/Q demodu lator and x6 multiplier chain at the LO port. The receiver providesa conversion gain of 27 dB and has a noise figure of 10 dB. It has 3dB RF bandwidth of 28 GHz from 112-140 GHz. The transmitterand receiver have dc power consumption of 240 mW and 280 mW,respectively. The chip area of each transmitter and receiver circuitis 1.4 mm × 1.1 mm.