http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
A POLYNOMIALLY BASED SPICE MODEL FOR HIGH ELECTRON MOBILITY TRANSISTORS (HEMTS)
Mahon, Simon,Skellern, David 대한전자공학회 1989 ICVC : International Conference on VLSI and CAD Vol.1 No.1
A new HEMT model that accurately predicts device DC and charge control characteristics is presented. The model features continuous and smooth device equations, validity for all regions of operation, computational efficiency and symmetry with respect to source and drain, making it suitable for implementation in SPICE.