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Baeg, Kang-Jun,Noh, Yong-Young,Sirringhaus, Henning,Kim, Dong-Yu WILEY-VCH Verlag 2010 Advanced Functional Materials Vol.20 No.2
<P>Organic field-effect transistor (FET) memory is an emerging technology with the potential to realize light-weight, low-cost, flexible charge storage media. Here, solution-processed poly[9,9-dioctylfluorenyl-2,7-diyl]-co-(bithiophene)] (F8T2) nano floating gate memory (NFGM) with a top-gate/bottom-contact device configuration is reported. A reversible shift in the threshold voltage (V<SUB>Th</SUB>) and reliable memory characteristics was achieved by the incorporation of thin Au nanoparticles (NPs) as charge storage sites for negative charges (electrons) at the interface between polystyrene and cross-linked poly(4-vinylphenol). The F8T2 NFGM showed relatively high field-effect mobility (µ<SUB>FET</SUB>) (0.02 cm<SUP>2</SUP> V<SUP>−1</SUP> s<SUP>−1</SUP>) for an amorphous semiconducting polymer with a large memory window (ca. 30 V), a high on/off ratio (more than 10<SUP>4</SUP>) during writing and erasing with an operation voltage of 80 V of gate bias in a relatively short timescale (less than 1 s), and a retention time of a few hours. This top-gated polymer NFGM could be used as an organic transistor memory element for organic flash memory.</P> <B>Graphic Abstract</B> <P>Solution-processed top-gate field-effect transistor (FET) memory with incorporated Au nanoparticles (NPs) in double-layered polymer gate dielectrics is fabricated using PS, cross-linked PVP, and poly[9,9-dioctylfluorenyl-2,7-diyl]-co-(bithiophene)] (F8T2). The threshold voltage is reversibly and systemically controlled by application of appropriate gate biases, which mainly originates from negative charge trapping in the Au NPs. This could be utilized as a key element in organic flash memory. <img src='wiley_img/1616301X-2010-20-2-ADFM200901677-content.gif' alt='wiley_img/1616301X-2010-20-2-ADFM200901677-content'> </P>
Sohn, Jung Inn,Hong, Woong-Ki,Lee, Mi Jung,Lee, Takhee,Sirringhaus, Henning,Kang, Dae Joon,Welland, Mark E IOP Pub 2009 Nanotechnology Vol.20 No.50
<P>We demonstrate the effect of surface chemical dynamics on carrier transport and recombination processes of electron–hole pairs in ZnO nanowire field effect transistors. We have found that the electrical conductance decreases and the threshold voltages shift in a positive gate voltage direction, as electrical characteristics are measured repeatedly. We associate this with the enhancement of oxygen adsorption by capturing electrons from the induced current during the probing. This results in an overall depletion of electrons and thus causes the positive shift in threshold voltages associated with the origin and width of characteristic hysteresis loops. In addition, the surface environment dependence of the photo-response related to a recombination process in ZnO nanowires is discussed in terms of the surface chemical reaction and band bending. </P>
Polaron Localization at Interfaces in High-Mobility Microcrystalline Conjugated Polymers
Zhao, N.,Noh, Y.-Y.,Chang, J.-F.,Heeney, M.,McCulloch, I.,Sirringhaus, H. WILEY-VCH Verlag 2009 ADVANCED MATERIALS Vol.21 No.37
<B>Graphic Abstract</B> <P>The charge-induced optical absorptions of two-dimensional polarons in semicrystalline, high-mobility conjugated polymers are investigated as a function of distance from an interface with polymer gate dielectrics of different dielectric constants. For high-k dielectrics, polarons in the accumulation layer at the interface are found to be more localized than those in the bulk. <img src='wiley_img/09359648-2009-21-37-ADMA200900326-content.gif' alt='wiley_img/09359648-2009-21-37-ADMA200900326-content'> </P>
Electrooptical Spectroscopy of Uniaxially Aligned Polythiophene Films in Field-Effect Transistors
Lee, Mi Jung,Chen, Zhuoying,Pietro, Riccardo di,Heeney, Martin,Sirringhaus, Henning American Chemical Society 2013 Chemistry of materials Vol.25 No.10
<P>Charge carriers induced in field-effect transistors based on a uniaxially aligned polythiophene polymer, poly(2,5-bis(3-alkylthiophen-2-yl)thieno[3,2-b]thiophene) (PBTTT), are investigated by electrooptical charge modulation spectroscopy (CMS). We used a zone-casting deposition method for uniaxial alignment of the nanoribbon crystalline domains of the polymer and examined the optical anisotropy of neutral and charge induced absorptions in FETs. We find that the charge-induced optical absorptions of the polaronic carriers at the interface exhibit a similar degree of uniaxial anisotropy as the absorption spectrum of the neutral polymer bulk suggesting similar degree of polymer alignment at the interface compared with the bulk. We observe subtle differences in the spectral shape of the polaron absorption polarized along and perpendicular to the polymer chain direction. We also detect an additional charge-induced absorption peak appearing at high charge carrier concentrations, which is similar to the charge-induced absorption that is typical for chemically doped films. These observations provide important insight into the interplay between polaron transport and polymer microstructure.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/cmatex/2013/cmatex.2013.25.issue-10/cm400266h/production/images/medium/cm-2013-00266h_0008.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/cm400266h'>ACS Electronic Supporting Info</A></P>
Charge‐Transport Anisotropy in a Uniaxially Aligned Diketopyrrolopyrrole‐Based Copolymer
Schott, Sam,Gann, Eliot,Thomsen, Lars,Jung, Seok‐,Heon,Lee, Jin‐,Kyun,McNeill, Christopher R.,Sirringhaus, Henning John Wiley and Sons Inc. 2015 Advanced Materials Vol.27 No.45
<P><B>Aligned films of a semiconducting DPP‐based copolymer</B> exhibit highly anisotropic charge transport with a band‐like temperature dependence along the alignment direction and hole mobilities of up to 6.7 cm<SUP>2</SUP> V<SUP>−1</SUP> s<SUP>−1</SUP>. X‐ray diffraction measurements reveal an exceptional degree of in‐plane alignment, high crystallinity, and a dominant face‐on orientation of the polymer backbones. The surprising charge‐transport properties are interpreted in a tie‐chain model consistent with anisotropic activation energies. </P>
Liu, C.,Xu, Y.,Liu, Z.,Tsao, H.N.,Mullen, K.,Minari, T.,Noh, Y.Y.,Sirringhaus, H. Elsevier Science 2014 Organic Electronics Vol.15 No.8
Solution-processed n-type organic field effect transistors (OFETs) are in need of proper metal contact for improving injection and mobility, as well as balanced hole mobility for building logic circuit units. We address the two distinct problems by a simple technique of transfer-printing. Transfer-printed Au contacts on a terrylene-based semiconductor (TDI) significantly reduced the inverse subthreshold slope by 5.6V/dec and enhanced the linear mobility by over 5 times compared to evaporated Au contacts. Hence, devices with a high-work-function metal (Au) are comparable with those with low-work-function metals (Al and Ca), indicating a fundamental advantage of transfer-printed electrodes in electron injection. We also transfer-printed a poly(3-hexylthiophene) (P3HT) layer onto TDI to construct a double-channel ambipolar transistor by a solution process for the first time. The transistor exhibits balanced hole and electron mobility (3.0x10<SUP>-3</SUP> and 2.8x10<SUP>-3</SUP>cm<SUP>2</SUP>V<SUP>-1</SUP>s<SUP>-1</SUP>) even in a coplanar structure with symmetric Au electrodes. The technique is especially useful for reaching intrinsic mobility of new materials, and enables significant enlargement of the material tanks for solution-processed functional heterojunction OFETs.