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M. V. Ganeswara Rao,N. Ramanjaneyulu,Balamurali Pydi,Umamaheshwar Soma,K. Rajesh Babu,Satti Harichandra Prasad 한국전기전자재료학회 2023 Transactions on Electrical and Electronic Material Vol.24 No.6
The rapid advancement in nanoscale devices demands innovative gate dielectric materials to replace traditional Silicon dioxide. This paper investigates the electrical behavior and performance of a dual-gate FinFET employing different high-K gate dielectric materials (Silicon dioxide, Hafnium oxide, Titanium oxide) through ATLAS 2D simulation in 5 nm technology. We analyze how these high-K gate dielectric materials influence the device, focusing on performance enhancement. The study highlights various key performance parameters (ION, IOFF, gm, gds, RON, TF, EV, V IL, V IH, NML, NMH) and reveals a significant performance improvement with HfO2 dielectric material in the proposed Dual-Gate FinFET. Achieving impressive performance parameters ( ION : 21.59 mA, IOFF : 21 µA, Maximum net Electric field: 1221290 V/cm, g m(max) : 0.05187 S, gds(max) : 0.03462 S, RON(max) : 25.93 kΩ , TFmax: 5.02, G ainmax : 90.233, EVmax : 67.532 V, V IL : 0.21 V, V IH : 0.4 V, NML : 198 V, NMH : 600 V), this paper provides valuable insights for designing high-performance devices with HfO2 dielectric material.