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Reshmi Maity,N. P. Maity,K. Srinivasa Rao,Girija Sravani,K. Guha,S. Baishya 한국전기전자재료학회 2019 Transactions on Electrical and Electronic Material Vol.20 No.5
This paper models the fringing fi eld eff ects in a capacitive micromachined ultrasonic transducer (CMUT) structure for determining the sensitivity of the device. CMUT is used as a medical imaging component which can be an important module for sustainable healthcare system. The capacitance value of the device is evaluated based on Younes Ataiiyan’s method. To determine the equivalent capacitance of the device, the capacitances of the membrane, gap and silicon nitride insulating layer are associated in series. Mason’s modeling techniques are used to evaluate the membrane displacement. Circular membrane approximation model has been considered. Eff ects of the variation in membrane thickness, gap separation, and membrane radius on membrane displacement are investigated. The analytical prediction has been validated with the finite element method simulation results through PZFlex. Three dimensional modeling is carried out to accurately capture the characteristic behavior of the device. The agreements of both results are excellent which verifi es that fringing field effects exist in the device operation.
Performance Analysis of Nano-Electro-Mechanical-System Ultrasonic Sensor with Fringing Field Effects
Moumita Pal,N. P. Maity,S. Baishya,Reshmi Maity 한국전기전자재료학회 2021 Transactions on Electrical and Electronic Material Vol.22 No.6
In this work, modeling of the fringing field effects in a silicon carbide (SiC) based micromachined ultrasonic transducer (MUT) is reported. For such a micro/nano dimensional structure, the edge effect (fringing fi eld) extends far away and plays an important role in overall device operation. This extended field enhances the device equivalent capacitance. The analytically developed model is validated by finite element method (FEM). Electrostatic force developed and the actuated membrane displacement profiles are also evaluated in this work. The study involves Landau and Lifschitz method for evaluating equivalent device capacitance for establishing the fringing effect in the SiC MUT. Three dimensional modelling is also exhibited here to accurately portray the device characteristics precisely. Both the analytical and simulation establish the significant effect of fringing field in device operation.
N. P. Maity,Reshmi Maity,Subir Dutta,Subhasish Deb,K. Girija Sravani,K. Srinivasa Rao,S. Baishya 한국전기전자재료학회 2020 Transactions on Electrical and Electronic Material Vol.21 No.3
Surface potential and drain current models for a physically based double halo metal–oxide–semiconductor-fi eld-eff ect-transistor(MOSFET) are reported. The proposed models have been established in sub-threshold mode of MOSFET operation. The depletion layer depth used in the pseudo two dimensional Poisson’s equation comprises the effect of two symmetrical pocket implantations at both the ends of the channel region. In this effort, improvement in the investigation is brought in by taking lateral asymmetric channel owing to non-uniform doping. The conventional silicon-dioxide (SiO2) material is replaced with a promising high-k dielectric material hafnium oxide (HfO2) to analyze the surface potential and drain current models. Analytical results have been compared using Synopsys technology computer aided design (TCAD). Excellent conformities between the analytical models and simulations are observed.